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YG832C04R

Description
12 A, 40 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size62KB,4 Pages
ManufacturerFUJI
Websitehttp://www.fujielectric.co.jp/eng/fdt/scd/
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YG832C04R Overview

12 A, 40 V, SILICON, RECTIFIER DIODE

YG832C04R
SCHOTTKY BARRIER DIODE
(40V / 12A TO-22OF15)
Outline Drawings
10
±0.5
ø3.2
+0.2
-0.1
4.5
±0.2
2.7
±0.2
6.3
2.7
±0.2
1
2
3
3.7
±0.2
1.2
±0.2
13
Min
Features
Low V
F
Super high speed switching.
High reliability by planer design.
15
±0.3
0.7
±0.2
2.54
±0.2
0.6
+0.2
-0
2.7
±0.2
JEDEC
EIAJ
SC-67
Applications
High speed power switching.
Connection Diagram
2
1
3
Maximum Ratings and Characteristics
Absolute Maximum Ratings
Item
Repetitive peak reverse voltage
Repetitive peak surge reverse voltage
Isolating voltage
Average output current
Suege current
Operating junction temperature
Storage temperature
Symbol
V
RRM
V
RSM
V
iso
I
O
I
FSM
T
j
T
stg
tw=500ns, duty=1/40
Terminals to Case,
AC. 1min.
duty=1/2, Tc=112°C
Square wave
Sine wave 10ms
Conditions
Rating
40
40
1500
12*
120
+150
-40 to +150
Unit
V
V
V
A
A
°C
°C
*
Out put current of centertap full wave connection.
Electrical Characteristics (Ta=25°C Unless otherwise specified )
Item
Forward voltage drop **
Reverse current **
Thermal resistance
Symbol
V
F
I
R
R
th(j-c)
Conditions
I
F
=4.0A
V
R
=V
RRM
Junction to case
Max.
0.53
3.0
3.5
Unit
V
mA
°C/W
Mechanical Characteristics
Mounting torque
Weight
Recommended torque
0.3 to 0.5
2.3
**
Rating per element
N·m
g

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