YG835C04R
SCHOTTKY BARRIER DIODE
(40V / 22A TO-22OF15)
Outline Drawings
10
±0.5
ø3.2
+0.2
-0.1
4.5
±0.2
2.7
±0.2
6.3
2.7
±0.2
1
2
3
3.7
±0.2
1.2
±0.2
13
Min
Features
Low V
F
Super high speed switching.
High reliability by planer design.
15
±0.3
0.7
±0.2
2.54
±0.2
0.6
+0.2
-0
2.7
±0.2
JEDEC
EIAJ
SC-67
Applications
High speed power switching.
Connection Diagram
2
1
3
Maximum Ratings and Characteristics
Absolute Maximum Ratings
Item
Repetitive peak reverse voltage
Repetitive peak surge reverse voltage
Isolating voltage
Average output current
Suege current
Operating junction temperature
Storage temperature
Symbol
V
RRM
V
RSM
V
iso
I
O
I
FSM
T
j
T
stg
tw=500ns, duty=1/40
Terminals to Case,
AC. 1min.
duty=1/2, Tc=95°C
Square wave
Sine wave 10ms
Conditions
Rating
40
40
1500
22*
120
+150
-40 to +150
Unit
V
V
V
A
A
°C
°C
*
Out put current of centertap full wave connection.
Electrical Characteristics (Ta=25°C Unless otherwise specified )
Item
Forward voltage drop **
Reverse current **
Thermal resistance
Symbol
V
F
I
R
R
th(j-c)
Conditions
I
F
=6.0A
V
R
=V
RRM
Junction to case
Max.
0.45
15.0
2.5
Unit
V
mA
°C/W
Mechanical Characteristics
Mounting torque
Weight
Recommended torque
0.3 to 0.5
2.3
**
Rating per element
N·m
g
(40V / 22A TO-22OF15)
Characteristics
Forward Characteristic (typ.)
100
10
3
YG835C04R
Reverse Characteristic (typ.)
Tj=150 C
10
10
2
o
o
Tj=125 C
(mA)
(A)
10
1
Tj=100 C
o
Forward Current
Tj=150 C
1
Tj=125 C
Tj=100 C
Tj=25 C
o
o
o
o
Reverse Current
10
0
10
-1
Tj= 25 C
o
IF
0.1
IR
10
-2
0.01
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
10
-3
0
10
20
30
40
50
VF
Forward Voltage
(V)
VR
Reverse Voltage
(V)
Forward Power Dissipation
17
16
15
Io
Reverse Power Dissipation
16
15
14
360°
VR
DC
(W)
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
0
1
360°
(W)
λ
13
12
11
10
9
8
7
6
5
4
3
2
1
Forward Power Dissipation
Square wave
λ
=60
Square wave
λ
=120
Sine wave
λ
=180
o
o
o
o
Reverse Power Dissipation
α
Square wave
λ
=180
DC
α
=180
o
WF
Per 1element
2
3
4
5
6
7
8
9
10
11
12
PR
0
0
5
10
15
20
25
30
35
40
45
Io
Average Forward Current
(A)
VR
Reverse Voltage
(V)
Current Derating (Io-Tc)
160
150
140
130
120
DC
10000
Junction Capacitance Characteristic (typ.)
C)
(pF)
1000
o
o
o
100
Case Temperature
Sine wave
λ
=180
90
80
70
60
50
360°
λ
Io
VR=30V
Square wave
λ
=180
Square wave
λ
=120
Junction Capacitance
Cj
110
(
o
100
Tc
40
30
20
0
5
10
15
20
Square wave
λ
=60
o
10
25
30
35
1
10
100
Io
Average Output Current
(A)
VR
Reverse Voltage
(V)
λ
:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
(40V / 22A TO-22OF15)
Surge Capability
1000
YG835C04R
Peak Half - Wave Current
I FSM
(A)
100
10
1
10
100
Number of Cycles at 50Hz
Transient Thermal Impedance
10
2
Transient Thermal Impedance (
o
C/W)
10
1
10
0
10
-1
10
-3
10
-2
10
-1
10
0
10
1
10
2
t
Time
(sec.)
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