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YG838C03R

Description
38 A, 30 V, SILICON, RECTIFIER DIODE, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size77KB,4 Pages
ManufacturerETC2
Download Datasheet View All

YG838C03R Overview

38 A, 30 V, SILICON, RECTIFIER DIODE, TO-220AB

YG838C03R
(30A)
SCHOTTKY BARRIER DIODE
TO-220F
(30V / 30A )
Outline drawings, mm
Type name
Polarity mark
Features
Low V
F
Super high speed switching
High reliability by planer design
Connection diagram
Applications
High speed power switching
1
2
3
Maximum ratings and characteristics
Absolute maximum ratings
Item
Repetitive peak reverse voltage
Repetitive peak surgereverse voltage
Average output current
Surge current
Operating junction temperature
Storage temperature
Symbol
V
RRM
V
RSM
I
o
I
FSM
T
j
T
stg
tw=500ns, duty=
1/40
Square wave, duty=
1/2
Tc=85°C
Sine wave
10ms
Conditions
Rating
30
35
30*
180
-40 to +150
-40 to +150
Unit
V
V
A
A
°C
°C
*
Average forward current of centertap full wave connection
Electrical characteristics (Ta=25°C Unless otherwise specified )
Item
Forward voltage drop
Reverse current
Thermal resistance
Symbol
V
FM
I
RRM
R
th(j-c)
Conditions
I
FM
=12.5A
V
R
=V
RRM
Junction to case
Max.
0.53
8
2.0
Unit
V
mA
°C/W
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