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BT152X-600R

Description
20 A, 650 V, SCR
CategoryAnalog mixed-signal IC    Trigger device   
File Size37KB,6 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Environmental Compliance
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BT152X-600R Overview

20 A, 650 V, SCR

BT152X-600R Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknow
Nominal circuit commutation break time70 µs
Critical rise rate of minimum off-state voltage200 V/us
Maximum DC gate trigger current32 mA
Maximum DC gate trigger voltage1.5 V
Maximum holding current60 mA
JESD-609 codee3
Maximum leakage current1 mA
On-state non-repetitive peak current200 A
Maximum on-state voltage1.75 V
Maximum on-state current13000 A
Maximum operating temperature125 °C
Off-state repetitive peak voltage650 V
surface mountNO
Terminal surfaceMatte Tin (Sn)
Trigger device typeSCR
Philips Semiconductors
Product specification
Thyristors
BT152X series
GENERAL DESCRIPTION
Glass passivated thyristors in a full
pack, plastic envelope, intended for
use in applications requiring high
bidirectional
blocking
voltage
capability and high thermal cycling
performance. Typical applications
include motor control, industrial and
domestic lighting, heating and static
switching.
QUICK REFERENCE DATA
SYMBOL
V
DRM
,
V
RRM
I
T(AV)
I
T(RMS)
I
TSM
PARAMETER
BT152X-
Repetitive peak off-state
voltages
Average on-state current
RMS on-state current
Non-repetitive peak on-state
current
MAX. MAX. MAX. UNIT
400R
450
13
20
200
600R
650
13
20
200
800R
800
13
20
200
V
A
A
A
PINNING - SOT186A
PIN
1
2
3
DESCRIPTION
cathode
anode
gate
PIN CONFIGURATION
case
SYMBOL
a
k
case isolated
1 2 3
g
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
DRM
I
T(AV)
I
T(RMS)
I
TSM
PARAMETER
Repetitive peak off-state
voltages
Average on-state current
RMS on-state current
Non-repetitive peak
on-state current
half sine wave; T
hs
43 ˚C
all conduction angles
half sine wave; T
j
= 25 ˚C prior to
surge
t = 10 ms
t = 8.3 ms
t = 10 ms
I
TM
= 50 A; I
G
= 0.2 A;
dI
G
/dt = 0.2 A/µs
CONDITIONS
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-40
-
MAX.
-400R -600R -800R
450
1
650
1
800
13
20
200
220
200
200
5
5
5
20
0.5
150
125
UNIT
V
A
A
A
A
A
2
s
A/µs
A
V
V
W
W
˚C
˚C
I
2
t
dI
T
/dt
I
GM
V
GM
V
RGM
P
GM
P
G(AV)
T
stg
T
j
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak reverse gate voltage
Peak gate power
Average gate power
over any 20 ms period
Storage temperature
Operating junction
temperature
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
October 1997
1
Rev 1.100

BT152X-600R Related Products

BT152X-600R BT152X-400R BT152X BT152X-800R
Description 20 A, 650 V, SCR 20 A, 650 V, SCR 20 A, 650 V, SCR 20 A, 800 V, SCR
Maximum leakage current 1 mA 1 mA 1 mA 1 mA
Maximum operating temperature 125 °C 125 °C 125 Cel 125 °C
Off-state repetitive peak voltage 650 V 450 V 650 V 800 V
surface mount NO NO NO NO
Is it Rohs certified? conform to conform to - conform to
Maker Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.) - Philips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code unknow unknow - unknow
Nominal circuit commutation break time 70 µs 70 µs - 70 µs
Critical rise rate of minimum off-state voltage 200 V/us 200 V/us - 200 V/us
Maximum DC gate trigger current 32 mA 32 mA - 32 mA
Maximum DC gate trigger voltage 1.5 V 1.5 V - 1.5 V
Maximum holding current 60 mA 60 mA - 60 mA
JESD-609 code e3 e3 - e3
On-state non-repetitive peak current 200 A 200 A - 200 A
Maximum on-state voltage 1.75 V 1.75 V - 1.75 V
Maximum on-state current 13000 A 13000 A - 13000 A
Terminal surface Matte Tin (Sn) Matte Tin (Sn) - Matte Tin (Sn)
Trigger device type SCR SCR - SCR
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