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SM4004

Description
1 A, 400 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size139KB,2 Pages
ManufacturerSHANGHAI SHANGLANG ELECTRONIC TECHNOLOGY CO., LTD.
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SM4004 Overview

1 A, 400 V, SILICON, SIGNAL DIODE

SM4004 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
stateDISCONTINUED
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formC BEND
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structuresingle
Diode component materialssilicon
Diode typeSignal diode
Maximum repetitive peak reverse voltage400 V
Maximum average forward current1 A
CE
CHENYI ELECTRONICS
SM4001 THRU SM4007
SURFACE MOUNT GALSS PASSIVATED JUNCTION RECTIFIER
Reverse Voltage - 50 to 1000 Volts
Forward Current - 1.0Ampere
FEATURES
. The plasitc package carries Underwrites Laboratory
Flammability Classification 94V-0
. For surface mounted applications
. Glass passivated junction
. High temperature soldering guaranteed: 250 /10 seconds, at terminals
MELF(DO-213AB)
MECHANICAL DATA
.
Case:
JEDEC SMA(DO-214AB) molded plastic
.
Terminals:
Lead solderable per MIL-STD-750,method 2026
.
Polarity:
Color band denotes cathode end
.
Mounting Position:
Any
.
Weight:
0.0041 ounce, 0.116 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Ratings at 25
ambient temperature unless otherwise specified,Single phase,half wave 60Hz,resistive or inductive)
load. For capacitive load,derate current by 20%)
Symbols
Maximum Recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375"(9.5mm) lead length at T
A
=75
Peak forward surge current (8.3ms
half sing wave superimposed on rated load
(JEDEC method)
Maximum instantaneous forward voltage at 1.0 A
Maximum reverse
current at rated DC Blocking Voltage
Typical Thermal Resistance
Typical Junction Capacitance(Note 1)
Maximum DC Blocking Voltage temperature
Operating and storage temperature range
T
A
=25
T
A
=125
(Note 2)
(Note 3)
R
R
C
J
T
A
T
J
T
STG
JA
JL
SM
4001
50
35
50
SM
4002
100
70
100
SM
4003
200
140
200
SM
4004
400
280
400
1.0
SM
4005
600
420
600
SM
4006
800
560
800
SM
4007
1000
700
100
Units
Volts
Volts
Volts
Amp
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
30.0
Amps
V
F
I
R
1.1
5.0
Volts
A
50.0
75.0
/W
30.0
15.0
+150.0
-65 to +175
pF
Notes:
1.Measured at 1MHz and applied reverse voltage of 4.0V DC.
1.Thermal resistance from junction to ambient, 0.24 X 0.24"(6.0 X 6.0mm) copper pads to each terminals
1.Thermal resistance from junction to terminals, 0.24 X 0.24"(6.0 X 6.0mm) copper pads to each terminals
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD
Page 1 of 2

SM4004 Related Products

SM4004 SM4007 SM4006 SM4005 SM4002 SM4003 SM4001
Description 1 A, 400 V, SILICON, SIGNAL DIODE SIGNAL DIODE 1 A, SILICON, SIGNAL DIODE 1 A, SILICON, SIGNAL DIODE 1 A, 100 V, SILICON, SIGNAL DIODE 1 A, 200 V, SILICON, SIGNAL DIODE, DO-213AB 1 A, 50 V, SILICON, SIGNAL DIODE
Number of terminals 2 - - - 2 2 2
Number of components 1 - - - 1 1 1
state DISCONTINUED ACTIVE - - DISCONTINUED ACTIVE DISCONTINUED
packaging shape Rectangle - - - round ROUND Rectangle
Package Size SMALL OUTLINE - - - LONG FORM LONG FORM SMALL OUTLINE
surface mount Yes - - - Yes Yes Yes
Terminal form C BEND - - - WRAP AROUND WRAP AROUND C BEND
Terminal location pair - - - END END pair
Packaging Materials Plastic/Epoxy - - - Plastic/Epoxy PLASTIC/EPOXY Plastic/Epoxy
structure single - - - single SINGLE single
Diode component materials silicon - - - silicon SILICON silicon
Diode type Signal diode Signal diode - - Signal diode SIGNAL DIODE Signal diode
Maximum repetitive peak reverse voltage 400 V - - - 100 V 200 V 50 V
Maximum average forward current 1 A - - - 1 A 1 A 1 A

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