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ZTE3.3

Description
3.3 V, 0.3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
CategoryDiscrete semiconductor    diode   
File Size111KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric View All

ZTE3.3 Overview

3.3 V, 0.3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35

ZTE3.3 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerVishay
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSINGLE
Diode typeZENER DIODE
Maximum dynamic impedance20 Ω
JESD-609 codee0
Number of components1
Maximum operating temperature150 °C
Maximum power dissipation0.3 W
Nominal reference voltage3.3 V
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Maximum voltage tolerance6%
Working test current5 mA
ZTE1.5 thru ZTE5.1
Vishay Semiconductors
formerly General Semiconductor
Voltage Stabilizers
DO-204AH (DO-35 Glass)
Features
• Silicon Stabilizer Diodes
• Monolithic integrated analog circuits designed for
small power stabilizer and limitation circuits,
providing low dynamic resistance and high-quality
stabilization performance as well as low noise. In the
reverse direction, these devices show the behavior of
forward-biased silicon diodes.
• The end of the ZTE device marked with the cathode ring
is to be connected: ZTE1.5 and ZTE2 to the negative
pole of the supply voltage; ZTE2.4 thru ZTE5.1 to the
positive pole of the supply voltage.
• These diodes are also available in MiniMELF case with
the type designation LL1.5 … LL 5.1.
min. 1.083 (27.5)
max. .150 (3.8)
max.
.079 (2.0)
Cathode
Mark
min. 1.083 (27.5)
Dimensions are in inches
and (millimeters)
Mechanical Data
Case:
DO-35 Glass Case
Weight:
approx. 0.13g
Packaging codes/options:
D7/10K per 13” reel (52mm tape), 20K/box
D8/10K per Ammo tape, (52mm tape), 20K/box
max.
.020 (0.52)
Maximum Ratings
Parameter
(T
A
= 25°C unless otherwise noted)
Symbol
Value
Unit
Operating Current (see Table “Characteristics”)
Inverse Current
Power dissipation at T
amb
= 25°C
Junction temperature
Storage temperature range
I
F
P
tot
T
J
T
S
100
300
(1)
150
– 55 to +150
mA
mW
°C
°C
Electrical and Thermal Characteristics
Parameter
Forward Voltage at I
F
= 10 mA
Temperature Coefficient of the
stabilized voltage at I
Z
= 5 mA
ZTE1.5, ZTE2
ZTE2.4, ZTE5.1
(T
A
= 25°C unless otherwise noted)
Symbol
V
F
Min.
Typ.
–26
–34
Max.
1.1
400
(1)
Unit
V
10
–4
/°C
10
–4
/°C
°C/W
α
VZ
α
VZ
R
θJA
Thermal resistance junction to ambient air
Document Number 88425
02-May-02
www.vishay.com
1

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