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ZXMHC3F381N8

Description
3980 mA, 30 V, 4 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
Categorysemiconductor    Discrete semiconductor   
File Size733KB,12 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Download Datasheet Parametric View All

ZXMHC3F381N8 Overview

3980 mA, 30 V, 4 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET

ZXMHC3F381N8 Parametric

Parameter NameAttribute value
Number of terminals8
Minimum breakdown voltage30 V
Processing package descriptionSOP-8
Lead-freeYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingMATTE TIN
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
structureBRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE
Number of components4
transistor applicationsSWITCHING
Transistor component materialsSILICON
Channel typeN-CHANNEL AND P-CHANNEL
field effect transistor technologyMETAL-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeGENERAL PURPOSE SMALL SIGNAL
Maximum leakage current3.98 A
Maximum drain on-resistance0.0330 ohm
A Product Line of
Diodes Incorporated
ZXMHC3F381N8
30V SO8 Complementary enhancement mode MOSFET H-Bridge
Summary
Device
V
(BR)DSS
Q
G
R
DS(on)
33mΩ @ V
GS
= 10V
N-CH
30V
9.0nC
60mΩ @ V
GS
= 4.5V
55mΩ @ V
GS
= -10V
P-CH
-30V
12.7nC
80mΩ @ V
GS
= -4.5V
-3.3A
3.9A
-4.1A
I
D
T
A
= 25°C
5.0A
Description
This new generation complementary MOSFET H-Bridge
features low on-resistance achievable with low gate drive.
P1G
P1S/P2S
P2G
Features
2 x N + 2 x P channels in a SOIC package
Low voltage (V
GS
= 4.5 V) gate drive
P1D/N1D
P2D/N2D
Applications
N1G
N2G
DC Motor control
DC-AC Inverters
N1S/N2S
Ordering information
Device
ZXMHC3F381N8TC
Reel size
(inches)
13
Tape width
(mm)
12
Quantity
per reel
2,500
Device marking
ZXMHC
3F381
Issue 1.0 - March 2009
© Diodes Incorporated
1
www.diodes.com
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