Product Specification
Silicon NPN Power Transistor
2SC3720
DESCRIPTION
·High
Collector-Emitter Breakdown Voltage-
: V
(BR)CEO
= 800V (Min)
·High
Switching Speed
·Wide
Area of Safe Operation
APPLICATIONS
·Designed
for high speed switching and horizontal deflection
output applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
MAX
UNIT
V
CBO
Collector-Base Voltage
1200
V
V
CEO
Collector-Emitter Voltage
800
V
V
EBO
Emitter-Base Voltage
7
V
I
C
Collector Current-Continuous
10
A
I
CM
Collector Current-Peak
15
A
I
B
B
Base Current-Continuous
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
5
A
P
C
200
W
T
j
175
℃
T
stg
Storage Temperature Range
-65~175
℃
Website：www.jmnic.com
Product Specification
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SC3720
TYP.
MAX
UNIT
V
(BR)CEO
Collector-Emitter Breakdown Voltage
I
C
= 10mA; I
B
= 0
800
V
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= 4A; I
B
= 0.8A
B
1.5
V
V
BE
(sat)
Base-Emitter Saturation Voltage
I
C
= 4A; I
B
= 0.8A
B
2.0
V
h
FE
DC Current Gain
I
C
= 4A; V
CE
= 5V
6
20
I
CBO
Collector Cutoff Current
V
CB
= 1000V; I
E
= 0
0.1
mA
I
EBO
Emitter Cutoff Current
V
EB
= 6V; I
C
= 0
0.1
mA
Switching Times
t
on
Turn-On Time
I
C
= 4A; I
B1
= 0.8A; I
B2
= -1.6A;
V
CC
= 250V
1.0
μs
t
stg
Storage Time
3.5
μs
t
f
Fall Time
0.3
μs
Website：www.jmnic.com
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