JMnic
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-220F package
・Complement
to type 2SA1469
・Low
saturation voltage
・Excellent
current dependence of h
FE
・Short
switching time
APPLICATIONS
・Various
inductance of lamp drivers for
electronic equipment
・Inverters
,converters
・Switching
regulator ,driver
PINNING
PIN
1
2
3
Base
Collector
Emitter
DESCRIPTION
2SC3746
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
T
a
=25℃
P
C
Collector dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
20
150
-55~150
℃
℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
80
60
5
5
7
2
W
UNIT
V
V
V
A
A
JMnic
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
I
CBO
I
EBO
h
FE
f
T
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
CONDITIONS
I
C
=1mA ;R
BE
=∞
I
C
=10mA ;I
E
=0
I
E
=10mA ;I
C
=0
I
C
=2.5A;I
B
=0.125A
V
CB
=40V; I
E
=0
V
EB
=4V; I
C
=0
I
C
=1A ; V
CE
=2V
I
C
=1A ; V
CE
=5V
70
100
MIN
60
80
5
2SC3746
TYP.
MAX
UNIT
V
V
V
0.4
0.1
0.1
280
V
mA
mA
MHz
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=2.0A; I
B1
=-I
B2
=0.1A
V
CC
=20V ,R
L
=10Ω
0.1
0.5
0.1
μs
μs
μs
h
FE
Classifications
Q
70-140
R
100-200
S
140-280
2
FPGA/CPLD
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