MASK ROM, 32KX8, 40ns, CMOS, CDIP28, CERAMIC, DIP-28
| Parameter Name | Attribute value |
| Objectid | 2078465046 |
| Parts packaging code | DIP |
| package instruction | DIP, |
| Contacts | 28 |
| Reach Compliance Code | unknown |
| ECCN code | 3A001.A.1.A |
| Maximum access time | 40 ns |
| JESD-30 code | R-CDIP-T28 |
| memory density | 262144 bit |
| Memory IC Type | MASK ROM |
| memory width | 8 |
| Number of functions | 1 |
| Number of terminals | 28 |
| word count | 32768 words |
| character code | 32000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -55 °C |
| organize | 32KX8 |
| Package body material | CERAMIC, METAL-SEALED COFIRED |
| encapsulated code | DIP |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Parallel/Serial | PARALLEL |
| Certification status | Not Qualified |
| Maximum supply voltage (Vsup) | 5.5 V |
| Minimum supply voltage (Vsup) | 4.5 V |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | NO |
| technology | CMOS |
| Temperature level | MILITARY |
| Terminal form | THROUGH-HOLE |
| Terminal location | DUAL |
| total dose | 1M Rad(Si) V |
| 5962H9751702QXX | 5962H9751701QXX | 5962H9751701VXX | 5962H9751702VXX | |
|---|---|---|---|---|
| Description | MASK ROM, 32KX8, 40ns, CMOS, CDIP28, CERAMIC, DIP-28 | MASK ROM, 32KX8, 40ns, CMOS, CDIP28, CERAMIC, DIP-28 | MASK ROM, 32KX8, 40ns, CMOS, CDIP28, CERAMIC, DIP-28 | MASK ROM, 32KX8, 40ns, CMOS, CDIP28, CERAMIC, DIP-28 |
| Objectid | 2078465046 | 2078465010 | 2078465028 | 2078465064 |
| Parts packaging code | DIP | DIP | DIP | DIP |
| package instruction | DIP, | DIP, | DIP, | DIP, |
| Contacts | 28 | 28 | 28 | 28 |
| Reach Compliance Code | unknown | unknown | unknown | unknown |
| ECCN code | 3A001.A.1.A | 3A001.A.1.A | 3A001.A.1.A | 3A001.A.1.A |
| Maximum access time | 40 ns | 40 ns | 40 ns | 40 ns |
| JESD-30 code | R-CDIP-T28 | R-CDIP-T28 | R-CDIP-T28 | R-CDIP-T28 |
| memory density | 262144 bit | 262144 bit | 262144 bit | 262144 bit |
| Memory IC Type | MASK ROM | MASK ROM | MASK ROM | MASK ROM |
| memory width | 8 | 8 | 8 | 8 |
| Number of functions | 1 | 1 | 1 | 1 |
| Number of terminals | 28 | 28 | 28 | 28 |
| word count | 32768 words | 32768 words | 32768 words | 32768 words |
| character code | 32000 | 32000 | 32000 | 32000 |
| Operating mode | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| Maximum operating temperature | 125 °C | 125 °C | 125 °C | 125 °C |
| Minimum operating temperature | -55 °C | -55 °C | -55 °C | -55 °C |
| organize | 32KX8 | 32KX8 | 32KX8 | 32KX8 |
| Package body material | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
| encapsulated code | DIP | DIP | DIP | DIP |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | IN-LINE | IN-LINE | IN-LINE | IN-LINE |
| Parallel/Serial | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| Maximum supply voltage (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| Minimum supply voltage (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| Nominal supply voltage (Vsup) | 5 V | 5 V | 5 V | 5 V |
| surface mount | NO | NO | NO | NO |
| technology | CMOS | CMOS | CMOS | CMOS |
| Temperature level | MILITARY | MILITARY | MILITARY | MILITARY |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| Terminal location | DUAL | DUAL | DUAL | DUAL |
| total dose | 1M Rad(Si) V | 1M Rad(Si) V | 1M Rad(Si) V | 1M Rad(Si) V |