<Se.mi-Cond\j.ctoi tPioducti, {Jnc.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
MECHANICAL DATA
Dimensions in mm (inches)
2N2913
2N2915
2N2917
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
DUAL NPN
PLANAR TRANSISTORS IN
TO77 PACKAGE
/ 0 . 7 1 (O.OJ8)
0.36(0.034)
TO-77 PACKAGE
PIN 1 - Collector 1
PIN 2 - Base 1
PIN 3 - Emitter 1
PIN 4 - Emitter 2
PIN 5 - Base 2
PIN 6 - Collector 2
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25°C unless otherwise stated)
V
CBO
EACH SIDE
45V
45V
6V
30
TOTAL DEVICE
Collector - Base Voltage
Collector - Emitter Voltage
1
Emitter- Base Voltage
Continuous Collector Current
Total Device Dissipation
Total Device Dissipation
T
AMB
= 25°C
Derate above 25°C
T
c
= 25°C
Derate above 25°C
VCEO
V
EBO
Ic
PD
PD
TSTG
SOOmW
1.72mW/°C
750mW
500mW
2.86W/°C
T
L
NOTES
Storage Temperature Range
Lead temperature (Soldering, 1 0 sec.)
1.5W
4.3mW / °C
8.6mW / °C
-65 to 200°C
300°C
1 . Base -
- Emitter Diode Open Circuited.
NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without
notice information rumished by NJ Semi-Conductors is believed to be bom accurate and reliable at the time ofaoing to
press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NI
Semi-Conductors encourages customers to verify that datasheets are current before plncing orders.
ELECTRICAL CHARACTERISTICS
(T
amb
= 25°C unless otherwise stated)
Parameter
Test Conditions
1
Min.
45
45
6
Typ.
Max.
Unit
INDIVIDUAL TRANSISTOR CHARACTERISTICS
l
c
= 10u.A
V(BR)CBO Collector - Base Breakdown Voltage
V(BR)CEO*
V(BR)EBO
ICBO
'CEO
I
EBO
Collector - Emitter Breakdown Voltage
l
c
= 10mA
Emitter - Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
!
E
=10uA
I
E
= 0
I
B
= 0
|
c
= 0
V
10
10
2
2
VCB = 45V
I
E
= 0
T
A
=150°C
nA
u.A
nA
V
CE
= 5V
V
EB
= 5V
V
CE
= 5V
lB = 0
l
c
= 0
l
c
= 10uA
T
A
= -55°C
l
c
= 100uA
60
15
100
150
240
h
FE
DC Current Gain
VCE = 5V
—
VCE = 5V
V
BE
VcE(sat)
h
jb
h
ob
|h
fe
|
C
obo
Base - Emitter Voltage
Collector - Emitter Saturation Voltage
Small Signal Common - Base
Input Impedance
Small Signal Common - Base
Output Admittance
Small Signal Common - Base
Current Gain
Common - Base Open Circuit
Output Capacitance
* Pulse Test: t
p
= SOOus , 5 < 1%.
VCE = 5V
!
B
=100uA
VCB = 5V
f = 1 kHz
VCB = 5V
l
c
= 1mA
l
c
= 100uA
l
c
= 1mA
l
c
= 1nnA
l
c
=1mA
0.70
0.35
25
32
1
3
6
V
a
f = 1 kHz
V
CE
= 5V
f= 20MHz
l
c
= 500uA
u,mho
—
PF
V
CB
= 5V
IE = 0
f = 140kHz to 1 MHz
Parameter
Test Conditions
l
c
= 100uA
l
c
= 100uA
l
c
= 10u.Ato1mA
l
c
= 100uA
T
A2
= -55°C
l
c
= 1 0OnA
T
A2
= 125°C
2N2917
2N2915
Min. Typ. Max.
Min. Typ. Max.
Unit
TRANSISTOR MATCHING CHARACTERISTICS
h
FE1
Static Forward Current VCE = 5V
h
FE2
|V
B
E1-V
B
E2l
Gain Balance Ratio
Base - Emitter Voltage
Differentja|
See Note 2.
V
CE
= 5V
V
CE
= 5V
VCE = 5V
T
A1
= 25°C
VCE = 5V
T
A 1
=25°C
0.9
1
3
5
0.8
1
0.8
1
5
10
1.6
mV
2
mV
|A(V
BE1
-V
BE2
)AT
A
|
Base — Emitter Voltage
Differential Change With
Temperature
NOTES
1) Terminals not under test are open circuited under all test conditions.
2) The lower of the two readings is taken as h
FE1
.
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