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2N2993

Description
100 V, NPN, Si, POWER TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size125KB,3 Pages
ManufacturerNew Jersey Semiconductor
Websitehttp://www.njsemi.com
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2N2993 Overview

100 V, NPN, Si, POWER TRANSISTOR

2N2993 Parametric

Parameter NameAttribute value
Maximum collector current0.2000 A
Maximum Collector-Emitter Voltage100 V
stateActive
structureSingle
Minimum DC amplification factor60
Maximum operating temperature200 Cel
larity_channel_typeNPN
wer_dissipation_max__abs_15 W
qualification_statusCOMMERCIAL
sub_categoryOther Transistors
surface mountNO
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Rated crossover frequency30 MHz
nc,
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
HIGH-FREQUENCY INTERMEDIATE-POWER TRANSISTORS
15 Watts at 100°C Case Temperature
Typ V
CE
,,
at)
of 0.2 V at 200 mA
Typ V
BE
of 0.8 V at 200 mA
Typ f
T
of 50 MHz at 10 V, 100 mA
* mechanical data
2N2987
THRU
oito
°"°
0 1 0 0 —<
1
1 5 MIN M
_ TEMf E«ATU«
^
COLLICTOI
-_^ MCAS POINT
_____ '
(
-moo
Jp-fc^
"~fif
' V \
THE COLLECTOR IS IN ELECTRICAL
CONTACT WITH THE CASE
°r •
0 100 MIN —>~-
n
'
!
'
"'
H-o4s|
^~
"!5\'
'/
/
'
/
'^~taii
r" 0700^
/
^3-^\
ALL JEDEC TO-5 DIMENSIONS
3 LEADS 3.ASE/ ^45'^V ' ° """
AND NOTES ARE APPLICABLE
'
tM
'
TTER
DETAILS OF OUTLINE IN —
THIS ZONE OPTIONAL
-HATING. °°" "'*
flAM
All OIM1NSIONS i l
l
UNLISi OTHilwiSI
!
"
elF
"
D
CASE TEMPERATURE IS M
EASURED 0.144 INCH ± 0.010 INCH DOWN FROM TOP OF CAN
2N2991
THRU
2N2994
OMm-
THE COLLECTOR IS IN ELECTRICAL
r
_
«?!•
Dlt
CONTACT WITH THE CASE
POSITION OF THE LEADS IN RELATION
T0 THE HEX IS NOT
\co«KTCM
STii --A
V r
f
01
"
I1
""
da""—i*"
-
mm
/
00
!%H
CONTROLLED
I.U
rf^S
NO
1
<,-«
U
N,-
I
,-/A-/r
FHHAQ
/
0011 • MAX-/
tl!MH__E
==f
/
£-TIM*llATUM MfAJUllMINt POINT
?c'jJ!j
\.
L^uumi
MAXIMUM RECOMMENDED MOUNTING
TOROUE: IS IN.-IB.
*" °"""
ISI0
"" "
'
UNltll OTHitWISE
SFicirno
absolute maximum ratings at
25°C
case temperature (unless otherwise noted)
t
2N2987 2N2988 2N2991 2N2992
2N2989 2N2990 2N2993 2N2994
Collector-Base Voltage
95 V
155 V
95V
155V
Collector-Emitter Voltage (See Note 1)
80V
100 V
80V
100V
Emitter-Base Voltage
-<
7V
>•
Continuous Collector Current
-<
1A
•*-
Peak Collector Current (See Note 2)
-4
1.5 A
* Continuous Base Current
-<
0.2 A
Safe Operating Region at (or below) 100°C Case Temperature . . . .
See Figure 10
*
Continuous Device Dissipation at (or below) 100°C Case Temperature
(See Note 3)
-<
15 W
* Continuous Device Dissipation at (or below) 25°C Free-Air Temperature
(See Note 4)
-<— 1 W —>•
-<
2 W
* Operating Case Temperature Range
^
-o5°C to 200°C
4
Storage Temperature Range
-^
-65°C to 200°C
* Lead Temperature
Y\<>
Inch from Case for 10 Seconds
^
230°C
*
*
*
»
NOTES: 1. This value applies between 1mA and 30 mA collector current when the bait-emitter diode ii open-circuited.
2. Thii volue oppliei foe l
p
< 0,3 mi, duty cycle < 10%.
3. Derate linearly to 200°C caie temperature at the rale of ISO mW/deg.
4 Derate linearly to 200°C free-air temperature at the rale of 5.7 mW/deg for the 2N2987 through 2N2990 and 11.4 mW/deg for the 2N2991 through 2N2994.
Quality
Semi-Conductors

2N2993 Related Products

2N2993 2N2992 2N2994 2N2991
Description 100 V, NPN, Si, POWER TRANSISTOR 100 V, NPN, Si, POWER TRANSISTOR 100 V, NPN, Si, POWER TRANSISTOR 5-Pin &#181;P Supervisory Circuits with Watchdog and Manual Reset
Maximum collector current 0.2000 A 0.2000 A 0.2000 A -
Maximum Collector-Emitter Voltage 100 V 100 V 100 V -
state Active Active Active -
structure Single Single Single -
Minimum DC amplification factor 60 60 60 -
Maximum operating temperature 200 Cel 200 Cel 200 Cel -
larity_channel_type NPN NPN NPN -
wer_dissipation_max__abs_ 15 W 15 W 15 W -
qualification_status COMMERCIAL COMMERCIAL COMMERCIAL -
sub_category Other Transistors Other Transistors Other Transistors -
surface mount NO NO NO -
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER -
Transistor component materials SILICON SILICON SILICON -
Rated crossover frequency 30 MHz 30 MHz 30 MHz -

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