,
Line.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC - 25°C
Derate above 25°C
Operating and Storage Temperature
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
Max
486
TELEPHONE: (973) 376-2922
Symbol
2N3250
2N3251
-40
-50
2N3250
2N3251,A*
2N3251A
-60
-60
Unit
Vdc
Vdc
Vdc
VCEO
VCBO
VEBO
TO-18
(TO-206AA)
3 CoNedor
-5.0
-200
0.36
2.06
1.2
6.9
- 65 to + 200
'c
PD
PD
T
J-
T
stg
mAdc
Watt
rnW/
0
C
Watts
mW/°C
1 Fmitrer
"C
GENERAL PURPOSE
TRANSISTORS
Unit
PNP SILICON
°C/W
'CM/
146
ELECTRICAL CHARACTERISTICS
(T
A
- 25"C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l)
(l
c
=-10mAdc)
Collector-Base Breakdown Voltage
dc =
10/iAdc)
Emitter-Base Breakdown Voltage
I
E
= -10 ;*Adc)
Collector Cutoff Current
2N3250, 2N3251
2N3251A
2N3250, 2N3251
2N3251A
V
(BR)CEO
Symbol
Min
Max
- 40
-60
-50
-60
-5.0
—
Vdc
V
(BR)CBO
—
Vdc
Vdc
nA
V(BR)EBO
!
CEX
—
—
-20
<VCE = -40 Vdc, V
EB
= -a.ovdc)
Base Cutoff Current
IVCE = -40 Vdc, VEB —
3
-°
Vd
c)
ON CHARACTERISTICS
DC Forward Current Transfer Ratio
dC
-=
-0.1 mAdc, V
CE
= -10 Vdc)
2N3250
2N3251, 2N3251A
2N3250
2N3251, 2N3251A
2N3250
2N3251, 2N3251A
2N3250
2N3251, 2N3251A
IBL
—
-50
nAdc
hFE
"
40
80
45
90
50
100
15
30
=
—
(I
C
- - 1-0 mAdc. V
CE
= -1.0 Vdc)
fl
c
= -10 mAdc, VCE = -1.0Vdc)(1)
150
300
—
Vdc
(l
c
= -50 mAdc, VCE = -1.0Vdc)(1)
Collector-Emitter Saturation Voltage (1)
dC = -10 mAdc, IB
-
-1.0 mAdc)
(1C - -50 mAdc, IB = -5.0 mAdc
Base Emitter Saturation Voltage (1)
dc = -10 mAdc, IB = -1.0 mAdc)
<IC - -50 mAdc, IB = -5.0 rnAdc)
SMALL-SIGNAL CHARACTERISTICS
Current Gain — Bandwidth Product
(1C = -10 mAdc, VCE =
20 Vdc, f - 100 MHz)
Output Capacitance
v
CE(sat)
—
v
6E(sat)
-0.25
-0.5
Vdc
-0.6
-0.9
-1.2
2N3250
2N3251, 2N3251A
fr
c
obo
250
300
—
—
6.0
8.0
MHz
pF
pF
(V
C
B = -10 Vdc, I
E
= o, f = 1.0 MHZ)
Input Capaciatance
(V
E
B = - 1.0 Vdc, ic - o, f = 1.0 MHZ)
Cibo
Qualify Semi-Conductors
2N32902N3251.A
ELECTRICAL CHARACTERISTICS
(continued) (TA
=
25°C unless otherwise noted.)
Characteristic
Input Impedance
(1C = -1.0 mA, VCE = -10 V, f - 1.0 kHz)
Voltage Feedback Ratio
(1C = -1.0mA, VCE = -lOV.f = 1.0kHz)
Small-Signal Current Gain
(1C - -1.0mA, VCE
1
OV.
f
Symbol
2N3250
2N3261, 2N3251A
2N3250
2N3251, 2N3251A
2N3250
2N3251. 2N3251A
2N3250
2N3251, 2N3251A
hie
h
re
Min
Max
Unit
kohms
1.0
2.0
6.0
12
10
20
x io-
4
—
hfe
hoe
rb'C
C
NF
= 10kHz)
1.0kHz)
50
100
4.0
10
—
—
200
400
40
60
250
6.0
Output Admittance
dC = -1.0mA, VCE = -10V, f-
fimhos
ps
dB
Collector Base Time Constant
(1C = -10 mA, VCE = -20 V, f = 31.8 MHz)
Noise Figure
dc = -100 nA, VCE = -5.0 v, RS = 1.0 kn, f = 100 HZ)
Characteristic
Symbol
Max
35
35
SWITCHING CHARACTERISTICS
Unit
ns
ns
ns
ns
Delay Time
Rise Time
Storage Time
Fall Time
(VGC = -3.ovdc, VBE = +o.svdc
1C = -10mAdc, IBI = -1.0mA)
1C - -IDmAdc, IBI = IBI = -VOmAdc)
<V
CC
3.0V)
2N3250
2N3251.2N3251A
td
t
r
IB
tf
175
200
50
(1) Pulse Test: PW - 300 /is, Duty Cycle = 2.0%.
SWITCHING TIME CHARACTERISTICS
FIGURE 1 — DELAY AND RISE TIME
FIGURE 2 — STORAGE AND FALL TIME
690
\
200
1
v
OB
=
500
Tj = 25"
•c
B1
IC = 10lBl = 10IB2
V
C C
= -3V
+c
.5V
200
\)
\v
N,
100
s
\^
X
k
100
\j = 25°C
50
V
s
s?
\
s
S,
V
s
y
S
^
tr*
x,
r @ V
C
(
; =
3V•
-£
50
^^^©Vcc = -10V
20
s
s
*
*
V
\
V
"^
x
S
x
X
•^
20
10
^
s.
•*.
5
-1
s^
'
s^
-50
-5
-10
-20
l
c
, COLLECTOR CURRENT (mAI
,
-2
-5
-10
-20
-50
1C, COLLECTOR CURRENT (mA|
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