^Bs-rnL-donauaioi
20
STERN
AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
2N3494
2N3495
CASE 31-03, STYLE 1
TO-39 (TO-205AD)
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current — Continuous
Symbol
2N3434 2N349S
2N3496 2N3497
80
80
45
1 50
120
120
i
Unit
2N3496
2N3497
CASE 22-03, STYLE 1
TO-18 (TO-206AA)
GENERAL PURPOSE
TRANSISTOR
PNP SILICON
VCEO
VCBO
VEBO
Vdc
Vdc
Vdc
mAdc
ic
PD
PD
T
J.
T
stg
2N3494 2N3496
ZN3495 2N3497
Total Device Dissipation (a, TA = 25°C
Derate above 25°C
Total Device Dissipation (ri TC = 25°C*
Derate above 25'C
Operating and Storage Junction
Temperature Range
600
3.43
400
2.28
mW
mW*°C
Watts
mW'"C
3.0
17.2
1.2
6.85
-65tc
+ 200
C
'Indicates Data in addition to JEDEC Requirements.
ELECTRICAL CHARACTERISTICS
(T
A
=
25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown VoltageU)
|l
c
- 10 mAdc, IB = 0}
Collector-Base Breakdown Voltage
UC = 10 uAdc, I
E
=• 0)
Emitter-Base Breakdown Voltage
(l£ = 10
fiAtic,
Ic = 0)
Collector Cutoff Current
(VCB = 50 Vdc, IE = 0|
(VCB = 90 Vdc, If = O)
Emitter Cutoff Current
2N3494, 2N3496
2N3495, 2N3497
2N3494, 2N3496
2N3495, 2N3497
2N3494, 2N3496
2N3495. 2N3497
V
|BR|CEO
Symbol
Min
MM
Unit
Vdc
80
120
-
Vdc
80
120
—
—
Vdc
nAdc
V
(BR)CBO
V
(BR)EBO
45
'CBO
-
100
100
25
nAdc
(VBE = 3.0 Vdc, ic = o)
ON CHARACTERISTICS
DC Current Gain(l)
(l
c
- lOO^Adc. VCE = 10Vdcl
dC = 1.0 mAdc, VCE - 10 Vdcl
(l
c
= 10 mAdc. VCE = 10 Vdc)
dC = 50 mAdc. VCE = 10 Vdcl
(1C = 100 mAdc, VCE = 10 Vdcl
Collector-Emitter Saturation Voltage
(1C = 10 mAdc, IB = 1.0 mAdc]
Base-Emitter Saturation Voltage
dC = 10 mAdc, lg = 1.0 mAdc)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain — Bandwidth ProductlZ)
(IC - 20 mAdc, VCE = '° Vdc, f = 100 MHz)
Output Capacitance
(VCB =
10
Vdc, IE = 0. f = 100 kHz)
Input Capacitance
(VBE =
2
-°
vdc
' ic
2N3494. 2N3496
2N3495, 2N3497
2N3494, 2N3496
2N3495, 2N3497
!EBO
—
"FE
35
40
40
40
35
v
CEIsat)
_
_
_
2N3494, 2N3496
2N3494, 2N3496
2N349S, 2N3497
—
Vdc
0.3
0.35
I
i
0.9
Vdc
—
—
0.6
v
BE(satl
fr
200
150
c
obo
MHz
—
pF
7.0
6.0
30
pF
—
—
-~*
= o. ' =
in
o kHz)
Qbo
Quality Semi-Conductors
, Dnc.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2N3494, 2N3495, 2N3496, 2N3497
ELECTRICAL CHARACTERISTICS
(continued) (TA = 25"C unless otherwise noted.)
Characteristic
Input Impedance
dc = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Voltage Feedback Ratio
dC = 10 mAdc. VCE = 10 Vdc. f = 1.0 kHz)
Small-Signal Current Gain
(I
C
= 10 mAdc, VCE = '0 Vdc. f = 1.0 kHz)
Output Admittance
(1C = 10 mAdc, VCE =
10 vdc
-
Symbol
n
ie
hre
hfe
hoe
Mln
0.1
Max
1.2
2.0
300
300
30
Unit
k ohms
X 10-
4
—
—
40
—
—
Mmhos
Ohms
' = '-0 kHz)
Real Part of Input Impedance
(1C = 20 mAdc, VCE *•
10 Vdc
. < = 300 MHz)
SWITCHING CHARACTERISTICS
Turn-On Time
(Vcc = 30 Vdc, Ic = 10 mAdc, I
B1
= 1.0 mAdc)
Turn-Off Time
(Vcc •
30 vdc
- >C = 10 mAdc. IBI = >B2 = 1-0
tnMc)
(1) Pulse Test: Pulse Width £ 300 MS, Duty Cycle = 2.0%.
(2) fy is defined as the frequency at which |hf
e
| extrapolates to unity.
FIGURE 1 -
TURN-ON TIME
TEST CIRCUIT
Re(h
ie
)
ton
-
—
300
1000
ns
toff
ns
FIGURE
2-
TURN-OFF TIME TEST CIRCUIT
DUTY CYCLE •; 2.0%
13 > 1.0 ml
DUTY CYCLE-! 10
Quality Semi-Conductors
DIY/Open Source Hardware
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