SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
2N3904
EPITAXIAL PLANAR NPN TRANSISTOR
FEATURES
・Low
Leakage Current
: I
CEX
=50nA(Max.), I
BL
=50nA(Max.)
@V
CE
=30V, V
EB
=3V.
・Excellent
DC Current Gain Linearity.
・Low
Saturation Voltage
: V
CE(sat)
=0.3V(Max.) @I
C
=50mA, I
B
=5mA.
・Low
Collector Output Capacitance
: C
ob
=4pF(Max.) @V
CB
=5V.
・Complementary
to 2N3906.
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Ta=25℃
Collector Power
Dissipation
Tc=25℃
1.0
Junction Temperature
Storage Temperature Range
*Cu Lead-Frame : 625mW(@Ta=25℃)
1.5W(@Tc=25℃)
Fe Lead-Frame : 400mW(@Ta=25℃)
1.0W(@Tc=25℃)
T
j
T
stg
150
-55½150
℃
℃
400
*P
C
1.5
W
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
RATING
60
40
6
200
50
625
mW
UNIT
V
V
V
mA
mA
2013. 7. 08
Revision No : 2
1/4
2N3904
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Collector Cut-off Current
Base Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage *
Emitter-Base Breakdown Voltage
SYMBOL
I
CEX
I
BL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
h
FE
(1)
h
FE
(2)
DC Current Gain
*
h
FE
(3)
h
FE
(4)
h
FE
(5)
V
CE(sat)
1
Collector-Emitter Saturation Voltage *
V
CE(sat)
2
V
BE(sat)
1
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small-Signal Current Gain
Collector Output Admittance
Noise Figure
*
V
BE(sat)
2
f
T
C
ob
C
ib
h
ie
h
re
V
CE
=10V, I
C
=1mA, f=1kHz
h
fe
h
oe
NF
V
CE
=5V, I
C
=0.1mA Rg=1kΩ,
f=10Hz½15.7kHz
Delay Time
t
d
-
-
35
100
1.0
-
-
-
-
400
40
5.0
μ
Ω
I
C
=50mA, I
B
=5mA
V
CE
=20V, I
C
=10mA, f=100MHz
V
CB
=5V, I
E
=0, f=1MHz
V
BE
=0.5V, I
C
=0, f=1MHz
-
300
-
-
1.0
0.5
-
-
-
-
-
-
0.95
-
4.0
8.0
10
8.0
MHz
pF
pF
kΩ
x10
-4
I
C
=50mA, I
B
=5mA
I
C
=10mA, I
B
=1mA
-
0.65
-
-
0.3
0.85
V
TEST CONDITION
V
CE
=30V, V
EB
=3V
V
CE
=30V, V
EB
=3V
I
C
=10μ I
E
=0
A,
I
C
=1mA, I
B
=0
I
E
=10μ I
C
=0
A,
V
CE
=1V, I
C
=0.1mA
V
CE
=1V, I
C
=1mA
V
CE
=1V, I
C
=10mA
V
CE
=1V, I
C
=50mA
V
CE
=1V, I
C
=100mA
I
C
=10mA, I
B
=1mA
MIN.
-
-
60
40
6.0
40
70
100
60
30
-
TYP.
-
-
-
-
-
-
-
-
-
-
-
MAX.
50
50
-
-
-
-
-
300
-
-
0.2
V
UNIT
nA
nA
V
V
V
dB
Rise Time
Switching Time
Storage Time
t
r
-
-
35
nS
t
stg
-
-
200
Fall Time
t
f
-
-
50
* Pulse Test : Pulse Width≦300μ Duty Cycle≦2%.
S,
2013. 7. 08
Revision No : 2
2/4