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2N3904_15

Description
EPITAXIAL PLANAR NPN TRANSISTOR
File Size779KB,5 Pages
ManufacturerKEC
Websitehttp://www.keccorp.com/
Download Datasheet View All

2N3904_15 Overview

EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
2N3904
EPITAXIAL PLANAR NPN TRANSISTOR
FEATURES
・Low
Leakage Current
: I
CEX
=50nA(Max.), I
BL
=50nA(Max.)
@V
CE
=30V, V
EB
=3V.
・Excellent
DC Current Gain Linearity.
・Low
Saturation Voltage
: V
CE(sat)
=0.3V(Max.) @I
C
=50mA, I
B
=5mA.
・Low
Collector Output Capacitance
: C
ob
=4pF(Max.) @V
CB
=5V.
・Complementary
to 2N3906.
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Ta=25℃
Collector Power
Dissipation
Tc=25℃
1.0
Junction Temperature
Storage Temperature Range
*Cu Lead-Frame : 625mW(@Ta=25℃)
1.5W(@Tc=25℃)
Fe Lead-Frame : 400mW(@Ta=25℃)
1.0W(@Tc=25℃)
T
j
T
stg
150
-55½150
400
*P
C
1.5
W
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
RATING
60
40
6
200
50
625
mW
UNIT
V
V
V
mA
mA
2013. 7. 08
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1/4
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