C/
J.
.£i±EU
,
Line.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
COMPLEMENTARY SILICON
MEDIUM-POWER TRANSISTORS
..designed for general-purpose power amplifier and switching
applications.
FEATURES:
* Low Collector-Emitter Saturation Voltage
v
cEi»tf°-
7
V (Max.) @ l
c
= 1.5 A
'Excellent DC Current Gain
hFE = 25-100 @ l
c
= 1.5 A
* Low Leakage Current- l
cex
=0.1 mA(Max)
MAXIMUM
RATINGS
Characteristic
Collector-Emitter Voltage
COIIector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
-Peak
Base Current
Total Power Dissipation @T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance Junction to Case
Symbol
Rejc
Symbol 2N4231A
2N6312
VCEO
VCBO
VEBO
40
40
NPN
PNP
2N4231A
2N4232A
2N4233A
2N6312
2N6313
2N6314
5 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTOR
40-80 VOLTS
75 WATTS
2N4232A 2N4233A
2N6313
2N6314
60
60
80
80
Unit
V
V
V
A
5.0
5.0
10
2.0
75
0.43
'c
ICM
'B
PO
Tj '^STO
TO-66
A
W
W/°C
°C
- 65 to 4-200
Max
2.32
Unit
°c/w
PN1.BASE
2.0MTTER
COLLECTOR(CASE>
FIGURE-1 POWER DERATING
80
2 70
0 I
DIM
A
B
C
D
E
F
G
H
I
J
K
MILLIMETERS
WIN
30.60
13.85
8.54
9.50
17,28
0.76
1.38
24.16
13.84
332
4.86
MAX
32.52
14.16
7.22
10.50
18.46
0.92
1.66
24.78
15.60
3.92
5.34
| 50
1 40
o 30
Z
20
10
0
25
50
75
100
125
150
175
200
T
c
, TEMPERATURE(
e
C)
2N4231A Thru 2N4233A NPN / 2N6312 Thru 2N6314 PNP
ELECTRICAL CHARACTERISTICS ( T
c
= 25°C unless otherwise noted )
Characteristic
OFF CHARACTERISTICS
Collector - Emitter Sustaining Voltage (1)
( l
c
- 1 00 mA, I. = 0 )
Symbol
Mln
Max
Unit
2N4231 A.2N631 2
2N4232A.2N6313
2N4233A.2N6314
2N4231 A.2N631 2
2N4232A.2N631 3
2N4233A.2N6314
2N4231 A.2M631 2
2N4232A.2N631 3
2N4233A.2N6314
2N4231A.2N6312
2N4232A.2N6313
2N4233A.2N6314
2N4231 A.2N631 2
2N4232A.2N6313
2N4233A.2N6314
V
CEO(n»)
V
40
60
80
mA
Collector Cutoff Current
( V
el
= 30 V, I. = 0 )
< V
el
= 50 V, I, = 0 )
( V
cs
= 70 V, I. - 0 )
Collector-Emitter Leakage Current
( V
e
. = 40 V,V.
B-B
-1 .5 V )
( V- = 60 V.V.?":-! . 5 V )
( V
ei
= 80 V,V^-1:5 V )
< V
M
= 40 V.V ™-1.5 V ,T
e
= 125°C )
( vH - 60 V,v!!^-1.5 V ,T! =• 125°C )
( V°| = 80 V.V^'1-5 V .T* = 125'C )
Collector Cutoff Current
( V
6i
* 40 V, I = 0 )
,
(V^^eOV, l
t
= 0)
( V
ei
= 80 V, I = 0 )
,
Emitter Cutoff Current
(V
EB
= 5.0V,I
C
=0)
ON CHARACTERISTICS (1)
DC Current Gain
(I
C
-0.5A,V
C
.-2.0V)
(l
c
= 1.SA,V
a
,=»2.0V)
(l
e
-3.0A,V
c
, = 2.0V)
(l
e
= 5.0A,V
el
= 4.0V)
Collector-Emitter Saturation Voltage
(l
c
» 1.5 A, I -0.16 A)
,
(l
e
s3.0A,l. = 0.3A)
(I
C
= 5.0A.I.= 1.25A)
Base-Emitter Saturation Voltage
(l
e
=1.5A,V
el
= 2.0V)
DYNAMIC CHARACTERISTICS
Current Gain - Bandwidth Product (2)
( l
c
=0.5 A V
OE
=10 V. f =1.0 MHz )
'CEO
1.0
1.0
1.0
mA
'CEX
0.1
0.1
0.1
1.0
1.0
1.0
uA
ICBO
50
50
50
mA
0.5
'EBO
hFE
40
25
10
4.0
V
CE,-«
100
V
0.7
2.0
4.0
V
1.4
VBE<on,
'T
C,*
MHz
4.0
PF
300
Output Capacitance
( V^ -10 V,
\
*0, f • 0.1 MHz )
Small-Signal Current Gain
( l
c
=0.5 A, V
CE
=10 V, f -1.0 KHz )
(1) Pulse Test Pulse width • 300 us , Duty Cycle ^ 2.0%
h*
20
FPGA/CPLD
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