,U
na.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
NPN POWER AMPLIFIER SILICON TRANSISTOR
Devices
2N4234
2N4235
2N4236
MAXIMUM RATINGS
Symbol 2N4234 2N4235 2N4236
Units
40
60
Collector-Emitter Voltage
80
Vdc
VCEO
40
60
80
Collector-Base Voltage
Vdc
VCBO
Emitter-Base Voltage
7.0
Vdc
VEBO
1.0
Collector Current
Adc
Ic
0.5
Base Current
Adc
IB
1.0
W
Total Power Dissipation
@T
A
= 25°C
(
"
PT
6.0
@T
C
= 25°C
(2)
-65 to +200
Operating & Storage Junction Temperature
Tj, T
s
tg
"C
1 ) Derate linearly 5.7 mW/°C for T
A
> +25°C
2) Derate linearly 34 mW/°C for T
c
> +25°C
*See appendix A for
package outline
Ratings
TO-39*
ELECTRICAL CHARACTERISTICS (T
A
= 25"C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
Ic = 100 mAdc
2N4234
V
(BR)CEO
2N4235
2N4236
Collector-Emitter Cutoff Current
V
CE
= 30 Vdc
2N4234
ICEO
V
CE
= 40 Vdc
2N4235
V
CE
= 60 Vdc
2N4236
Collector-Emitter Cutoff Current
VCE = 40 Vdc, V
BE
=1.5 Vdc
2N4234
ICEX
VCE = 60 Vdc, V
BE
= 1.5 Vdc
2N4235
VCE = 80 Vdc, VBE = 1.5 Vdc
2N4236
Collector-Base Cutoff Current
V
CE
= 40 Vdc
2N4234
ICBO
VCE = 60 Vdc
2N4235
VCE = 80 Vdc
2N4236
Emitter-Base Cutoff Current
IEBO
V
BE
= 7.0 Vdc
Min.
Max.
Unit
40
60
80
1.0
1.0
1.0
100
100
100
100
100
100
0.5
Vdc
mAdc
riAdc
r)Adc
mAdc
NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without
notice information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to
press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use NJ
Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
ELECTRICAL CHARACTERISTICS (coiTt)
Characteristics
ON CHARACTERISTICS'
Forward-Current Transfer Ratio
I
c
= 100 mAdc, VCE = 1.0 Vdc
I
c
= 250 mAdc, V
CE
= 1.0 Vdc
I
c
= 500 mAdc, V
CE
= 1 .0 Vdc
Collector-Emitter Saturation Voltage
I
c
= l.OAdc, I
B
= 100 mAdc
Ic = 500 mAdc, I
B
= 50 mAdc
Base-Emitter Saturation Voltage
I
c
= 500 mAdc, I
B
= 50 mAdc
I
c
= 1.0 Adc, I
B
= 100 mAdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
I
c
= 100 mAdc, VCE = 10 Vdc, f = 10 MHz
Output Capacitance
VCB = 10 Vdc, IE = 0, f = 100 MHz
SAFE OPERATING AREA
DC Tests
T
c
= +25°C, 1 cycle, t > 0.5 s
Test 1
VCE = 6.0 Vdc. I
c
= l.OAdc
Test 2
VCE = 12 Vdc, I
c
= 500 mAdc
Test 3
VCE = 30 Vdc, I
c
= 166 mAdc
2N4234
VCE = 30 Vdc, I
c
= 166 mAdc
2N4235
VCE
=
30 Vdc, I
c
" 166 mAdc
2N4236
(3) Pulse Test: Pulse Width = 300|ns, Duty Cycle < 2.0%.
Symbol
Min.
Max.
Unit
40
h
FE
30
20
150
VcE(sat)
0.6
0.4
1.1
1.5
Vdc
VfiEfsat)
Vdc
IhJ
3.0
pF
C
0
bo
100
Analog electronics
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