<z3E,ml-L.onauctoi
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
i, Line.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2N3773, 2N4348, 2N6259
Hometaxial-Base, High-Current Silicon N-P-N Transistors
Rugged High Voltage Devices for Applications
in Industrial and Commercial Equipment
These typei are hometaxial-b»se silicon n-p-n tran-
sition intended for a wide variety of high-voltage high-
current applications. Typical applications for these tran-
sistors include power-switching circuits, audio amplifiers,
series- and shunt-regulator driver and output stages, dc-to-dc
converters, inverters, and solenoid (hammeO/relay driver
service:
These devices employ the popular JEDEC TO 3 package;
they differ in maximum ratings for voltage, current, and
power.
Features:
• High dissipation capability -
120 W I2N4348), 150 W (2N3773), 250 W (2N6269)
•
•
5 A specification for h
FE
, VfjE. & VCE<»«> (2N4348)
8-A specification for
hFE, VBE. & VcE(Mt) (2N3773. 2N6259)
140 V min I2N4348). 160 V min (2N3773)
170 V min (2N6259)
• Low saturation voltaga with high beta
TERMINAL DESIGNATIONS
MAXIMUM RATINGS.
Absolute Minimum Values:
•COLLECTOR-TO-BASE VOLTAGE
COLLECTOR TO EMITTER VOLTAGE
" With base open
With reverse bias !VBE> ol -1.5 V
"EMITTER TO-BASE VOLTAGE
"COLLECTOR CURRENT'
Continuous
Peak
"BASE CURRENT:
Continuous . , . . . ,
,....,,...
Peak
"TRANSISTOR DISSIPATION:
At case temperatures up to 25°C
At case temperatures above 25°C
"TEMPERATURE RANGE:
Storage & Operating (Junction) . . . . . . . . . . . .
"PIN TEMPERATURE (During Soldering!:
At distances > 1/3? in. (0,8 mm) from case for II
2N434B
140
VCEO
VCEX
120
140
7
10
30
16
30
16
30
4
2N3773
160
140
160
2N62S9
170
150
170
IB
4
IS
4
IS
IS
FT
120
150
250
Orate
lj
n
«Arly
ta 200*0
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to.be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Qualify Semi-Conductors
ELECTRICAL CHARACTERISTICS,
At Case Temperature (
!
=
25°C Unless Otherwise Specified
LIMITS
UNITS
2N434B
Mm.
Max.
TEST CONDITIONS
CHARACTERISTIC
SYMBOL
VOLTAGE
V dc
CURRENT
A dc
'C
'B
2N3773
Min.
2N6259
Mm.
-
Mix.
VCE VBE
SoHactor-Cutoff Current:
With emitter open, V
CB
= 1 40 V
With base emitter
junction reverie biased
With base-emitter
junction reverse biased
andTc = 150°C
With bate open
Emitter-Cutoff Current
M»x
2
•ceo
'CEX
-
120
110
150
120
140
150
100
170
- ,5
- .5
- .5
b
- .5
- .6
1
-
10
mfl
?
0.2
10
4
mA
'CEX
mA
20
10
2
7
'CEO
mA
mA
IEBO
4
4
2
4
4
-^
0
6»
8»
8»
10»
16»
15
5
60
15
10
5
5
DC Forward Current
Transfer Ratio
60
15 60
10
h
FE
Collector-to-Emitter
Sustaining Voltage;
With base-emitter junction
reverse- biased IR0E
10
OiJ)
VCEX**
U S
'
1 5 O.I
140
160
i ;o
V
With external base-to-emntef
resistance (RBE* " tOOii
With base open
Vc£
R
(ftus)
V
CEO
lsusl
4
4
?
4
02»
02»
5»
B
a
8"
10»
&»
8»
10'
16»
06
OR
1 75
j 2
0
140
120
7
.150
160
150
V
V
140
Jase to Emitier Voltage
2 7
-
3
1
1 4
?
4
25
1
-
7
VflE
V
Collector-To Emitter
Saturation Voltage
V
v
CF
< t i a
''
Second- BieaV down
Collector Current
With base forward-biased and
1 -s nomepet'tive pulse
Second Breakdown Eneigy
With base reverse-biased and
L = 40 mH, RBE - 100SI
Magnitude of Common EmillPr.
Small-Signal, Short Cucun.
Forward Currenl Transter
Ratio If * 50kHz!
Common-Emitter, Small
Signal. Short-Circuit.
Forward Current Transfer
Ratio (f = 1 kHz)
Thermal Resistance
junction-io-Case
'S/h
b
SO
100
15
1 5
1
5
A
E
S
'h
c
. 1.5 2.5
0
\K
0
\K
0 125
.1
|H
fe
|
4
1
t
t
4
h
ft
4
l
40
40
40
R
,JC
1 46
117
07
°C/W
京公网安备 11010802033920号
EEWORLD
