'^onauctot LPtoducti, Unc.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
MEDIUM-POWER
PNP SILICON TRANSISTORS
..designed for driver circuits, switching and amplifier applications.
FEATURES:
* Low Collector-Emitter Saturation Voltage
V
CE(sat)
=0.6V(Max.)ei
c
= 1.0A
* Excellent Safe Operating Area
* Gain Specified to l
c
= 1.0 Amp.
* 2N4900 Complementary to NPN 2N4912
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
PNP
2N4898
2N4899
2N4900
1 AMPERE
PNP SILICON
POWER TRANSISTOR
40-80 VOLTS
25 WATTS
MAXIMUM RATINGS
Characteristic
Collector-Emitter Voltage
COIIector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
-Peak
Base Current
Total Power Dissipation @T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
'STO
Symbol
"CEO
"CBO
2N4898
40
40
2N4899
60
60
5.0
2N4900
80
80
Unit
V
'CM
1.0
4.0
1.0
TO-68
25
0.143
-65
to+200
w
w/°c
°c
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance Junction to Case
Symbol
R6jc
Max
7.0
Unit
°c/w
PIN LEASE
2.SMITTER
COUECTORfCASE)
FIGURE-1 POWER DERATING
25
I
20
DIM
A
B
C
D
E
MILLIMETERS
MIN
30.60
13.85
6.54
9.50
17.26
0.76
1.38
24.16
13.84
3.32
4.86
MAX
32.52
14.16
7.22
10.50
18.46
092
15
10
F
G
H
I
J
K
1.65
2478
15.60
3.92
25
50
75
100
125
150 175
200
5.34
T
c
, TEMPERATURE('C)
NJ Semiconductors reserves the nght to change test conditions, parameters limits and package dimensions without
not.ce information tarnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to
press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use NJ
Semi-Conductors encourages customers to verify that datasheets are current before placing order*
Quality Semi-Conductors
ELECTRICAL CHARACTERISTICS
(T
c
=
25°C unless otherwise noted )
Characteristic
OFF CHARACTERISTICS
Collector - Emitter Sustaining Voltage (1)
( l
c
= 100mA, IB = 0)
VCEO(IUS)
2N4898
2N4899
2N4900
2N4898
2N4899
2N4900
V
40
60
80
mA
0.5
0.5
0.5
mA
0.1
1.0
mA
0.1
mA
1.0
Symbol
Min
Max
Unit
Collector Cutoff Current
( V
CE
= 20 V, I
B
= 0 )
( V
CE
= 30 V, I
B
= 0 )
(V
CE
= 40V, I
B
= 0)
'CEO
Collector Cutoff Current
<V
CE
= RateV
CE0
.V
BE(0(n
=1.5V)
( V
CE
= Rate V^o.V^-1.5 V ,T
C
= 150«C )
Collector Cutoff Current
(V
CB
= RateV
CBO
,l
E
= 0)
Emitter Cutoff Current
(V^S-OV, l
c
=0 )
ON CHARACTERISTICS
(1)
DC Current Gain
(l
c
= 50mA,V
CB
=1.0V)
( l
c
= 500 mA,V
CI
= 1.0V)
(I
C
= 1.0A,V
C
,= 1.0V)
Collector-Emitter Saturation Voltage
(l
c
= 1.0 A, I
B
« 0.1 A)
Base-Emitter Saturation Voltage
(I
C
= 1.0A,I
B
= 0.1A)
Base-Emitter On Voltage
(I
C
= 1.0A,V
CE
=1.0V)
DYNAMIC CHARACTERISTICS
Current Gain - Bandwidth Product (2)
( l
c
=250 mA, V
CE
=10 V, f =1 .0 MHz )
Output Capacitance
( V
CB
=10 V, I
E
=0, f = 1 00 KHz )
Small-Signal Current Gain
( l
c
=250 mA, V
CE
=10 V, f -1.0 KHz )
(1) Pulse Test: Pulse width - 300 us , Duty Cycle
(2)f
T
= h,.!'^
ICEX
ICBO
IEBO
hFE
40
20
10
V«
VBE™
VBE,.*
100
V
0.6
V
1.3
V
1.3
'T
Cob
3.0
PF
100
25
"»
2.0%
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