20 STERN AVE.
SPRINGFIELD. NEW JERSEY 07081
TELEPHONE (973) 376-2922
U.SA
(212)227-6006
FAX: (973) 376-8960
NPN HIGH POWER SILICON TRANSISTOR
Devices
2N3902
2N5157
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Emitter-Base Voltage
Collector-Base Voltage
Base Current
Collector Current
Total Power Dissipation
(2> T
A
= +25°C
(1)
@
T
c
= +75°C
(2)
Operating & Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 29 mW/°C for T
A
> +25°C
2) Derate linearly 0.8 W/°C for T
c
> +75°C
Symbol
VCEO
VEBO
V
CBO
2N3902
400
5.0
IB
Ic
PT
T
J,
T
Stg
2N5157
500
6.0
700
2.0
3.5
5.0
100
-65 to +200
Max.
1.25
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
W
°C
Unit
°C/W
TO-3 (TO-204AA)*
Symbol
Rejc
*See Appendix A for Package
Outline
ELECTRICAL CHARACTERISTICS
Characteristics
OFF CHARACTERISTICS
Collector-Emitter Cutoff Current
VCE = 325 Vdc
V
CE
= 400Vdc
Collector-Emitter Cutoff Current
VBE = 1.5 Vdc; V
CE
= 700 Vdc
Emitter-Base Cutoff Current
V
EB
= 5.0 Vdc
V
EB
= 6.0Vdc
ON CHARACTERISTICS^
Base-Emitter Saturation Voltage
Ic= 1.0 Adc; IB = 0.1 Adc
I
c
= 3.5 Adc; IB = 0.7 Adc
Collector-Emitter Saturation Voltage
Ic= 1.0 Adc; IB = 0.1 Adc
Ic = 3. 5 Adc: IB = 0.7 Adc
Symbol
Miii.
Max.
Unit
2N3902
2N5157
ICEO
ICEX
250
250
500
200
200
(jAdc
(jAdc
joAdc
2N3902
2N5157
IEBO
VBE(sat)
1.5
2.0
0.8
2.5
Vdc
VcE(sat)
Vdc
.NJ Semi-Ccinltictors reserves the right to change lest conditions, parameter limits and package dimensions without notice.
Information furnished by NJ Semi-Conductors is helieved to he hoth accurate and reliable at the time ot"going to press. However NJ
Seim-C'iinductiirs assumes no rcspunsihility tor any errors or omissions discovered in its use. N.I .Semi-Conductor
1
; enc
tnstomeri to verirv 'h;it datasheets lire current helore placing orders.
ELECTRICAL CHARACTERISTICS (con't)
Characteristics
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS^ (con't)
Forward-Current Transfer Ratio
I
c
= 0.5 Adc; VCE = 5.0 Vdc
Ic= 1.0 Adc; VCE = 5.0 Vdc
I
c
= 2.5 Adc; V
CE
= 5.0 Vdc
I
c
= 3.5 Adc; V
CE
= 5.0 Vdc
Collector-Emitter Sustaining Voltage
Ic = 100 mAdc
b*
2N3902
2N5157
25
30
10
5
325
400
2.5
90
v«_
"
Vdc
DYNAMIC CHARACTERISTICS
Small-Signal Short-Circuit Forward Current Transfer Ratio
Ic = 0.2 Adc; V
CE
= 10 Vdc, f = 1 MHz
Output Capacitance
V
CB
= 10 Vdc; I
E
= 0, 100 kHz < f < 1.0 MHz
Ihfel
25
250
PF
c.
bo
t
on
SWITCHING CHARACTERISTICS
Turn-On Time
V
cc
= 125 Vdc; I
c
= 1.0 Adc; I
B
i= 0.1 Adc
Turn -Off Time
V
cc
= 125 Vdc; I
c
= 1.0 Adc; I
m
= 0.1 Adc; -I
B2
= 0.50 Adc
0.8
1.7
^
US
'off
SAFE OPERATING AREA
DC Tests (continuous)
T
c
= +25°C; t > 1.0 s (See Figure 3 of MIL-PRF-19500/371)
Test 1
V
CE
= 28.6
Vdc,
I
c
= 3.5
Adc
Test!
VCE = 70 Vdc, I
c
= 1.43 Adc
Test3
V
CE
= 325 Vdc, I
c
= 55 mAdc
2N3902
V
CE
= 400 Vdc, I
c
= 35 mAdc
2N5157
Switching Tests
Load condition C (undamped inductive load)
T
c
= 25°C; duty cycle < 10%; R
s
= 0.1 Q (See Figure 4 of MIL-PRF-19500/371)
Test 1
tp = approximately 3 ms (vary to obtain IQ; RBBI
=
20 Q; V
BB
i = 10 Vdc; ReB2
=
3 kQ;
V
BB:
= 1.5
Vdc;
V
cc
=
50
Vdc;
I
c
= 3.5 Adc; L = 60 mH; R = 3 Q; R
L
< 14Q.
Test2
tp= approximately 3 ms (vary to obtain IQ; RBBI
=
100 Q; VBBI
=
10
Vdc,
R
B
B2
=
3 kQ;
V
BB
2 = 1.5 Vdc; I
c
= 0.6 Adc V
cc
= 50 Vdc; L = 200 mH; R = 8 Q; R
L
< 83Q.
Switching Tests
Load condition (clamped inductive load)
T
c
= +25°C; duty cycle < 10%. (See Figure 5 of MIL-PRF-19500/371)
Testl
t
p
= approximately 30 ms (vary to obtain IQ; Rs = 0.1 Q; R
BB1
= 20 Q; V
BB
i = 10 Vdc; R
BB2
= 100 Q;
V
BB2
= 1.5 Vdc; V
cc
= 50 Vdc; I
c
= 3.5 Adc; L = 60 mH; R = 3 Q; R
L
> OQ.
(A suitable clamping circuit or diode can be used.)
Clamp Voltage = 400 +0, -5 Vdc
2N3902
Clamp Voltage = 500 +0, -5 Vdc
2N5157
(Clamped voltage must be reached)
3.) Pulse Test: Pulse Width = 300(js, Duty Cycle < 2.0%.
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