2N5190_15 datasheet, PDF - EEWORLD Datasheet

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2N5190_15: Description4 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-126; Categorysemiconductor Discrete semiconductor; File Size40KB，3 Pages; ManufacturerJinmei; Websitehttp://www.jmnic.com/

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2N5190_15 Overview

4 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-126

2N5190_15 Parametric

Parameter Name	Attribute value
Number of terminals	3
Transistor polarity	NPN
Maximum collector current	4 A
Maximum Collector-Emitter Voltage	60 V
Processing package description	TO-126, 3 PIN
state	ACTIVE
packaging shape	RECTANGULAR
Package Size	FLANGE MOUNT
Terminal form	THROUGH-HOLE
terminal coating	TIN LEAD
Terminal location	SINGLE
Packaging Materials	PLASTIC/EPOXY
structure	SINGLE
Number of components	1
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum ambient power consumption	40 W
Transistor type	GENERAL PURPOSE POWER
Minimum DC amplification factor	10
Rated crossover frequency	2 MHz

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Product Specification

www.jmnic.com

Silicon NPN Power Transistors

2N5190 2N5191 2N5192

DESCRIPTION

・With

TO-126 package

・Complement

to type 2N5193,2N5194,2N5195

・Excellent

safe operating area

APPLICATIONS

・For

use in medium power linear and

switching applications

PINNING

1

2

3

DESCRIPTION

Emitter

Collector;connected to

mounting base

Base

・

Absolute maximum ratings(Ta=25

℃)

SYMBOL

PARAMETER

2N5190

V

CBO

Collector-base voltage

2N5191

2N5192

2N5190

V

CEO

Collector-emitter voltage

2N5191

2N5192

V

EBO

I

C

I

CM

I

B

P

D

T

j

T

stg

Emitter-base voltage

Collector current

Collector current-Peak

Base current

Total power dissipation

Junction temperature

Storage temperature

T

C

=25℃

Open collector

Open base

Open emitter

CONDITIONS

VALUE

40

60

80

40

60

80

5

4

7

1

40

150

-65~150

V

A

W

℃

V

UNIT

THERMAL CHARACTERISTICS

SYMBOL

R

th j-c

PARAMETER

Thermal resistance junction to case

VALUE

3.12

UNIT

℃/W

JMnic

2N5190_15 Related Products

	2N5190_15	2N5190	2N5191	2N5192
Description	4 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-126	4 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-126	4 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-126	4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126
Number of terminals	3	3	3	3
Transistor polarity	NPN	NPN	NPN	NPN
Maximum collector current	4 A	4 A	4 A	4 A
Maximum Collector-Emitter Voltage	60 V	60 V	60 V	80 V
Processing package description	TO-126, 3 PIN	TO-126, 3 PIN	TO-126, 3 PIN	TO-126, 3 PIN
state	ACTIVE	ACTIVE	ACTIVE	ACTIVE
packaging shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	Rectangle
Package Size	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	Flange mounting
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-hole
terminal coating	TIN LEAD	TIN LEAD	TIN LEAD	tin lead
Terminal location	SINGLE	SINGLE	SINGLE	single
Packaging Materials	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	Plastic/Epoxy
structure	SINGLE	SINGLE	SINGLE	single
Number of components	1	1	1	1
Transistor component materials	SILICON	SILICON	SILICON	silicon
Transistor type	GENERAL PURPOSE POWER	GENERAL PURPOSE POWER	GENERAL PURPOSE POWER	universal power supply
Minimum DC amplification factor	10	10	10	20
Rated crossover frequency	2 MHz	2 MHz	2 MHz	2 MHz
transistor applications	SWITCHING	SWITCHING	SWITCHING	-
Maximum ambient power consumption	40 W	40 W	40 W	-

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