^s.mi'Cond\j.ctoi tPioducti, (inc.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2N5194, 2N5195
Preferred Devices
Silicon PNP Power
Transistors
These devices are designed for use in power amplifier and switching
circuits: excellent safe area limits. Complement to NPN 2N519L
2N5192.
MAXIMUM RATINGS
(Note 1)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Device Dissipation @ T
c
= 25 C
Derate above 25 C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction-to-Case
Symbol
BJC
Symbol
VCEO
2N5194
60
60
2N5195
80
80
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
W/ C
C/W
4 AMPERE
POWER TRANSISTORS
PNP SILICON
60 - 80 VOLTS
VCB
V
EB
'c
IB
PD
Tj, T
st
g
5.0
4.0
1
0
40
320
-65 to
+ 150
TO-225AA
Max
3.12
Unit
C/W
MARKING DIAGRAM
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC registered data.
Y
VWV
2N519x
= Year
= Work Week
= Device Code
x = 4 or 5
NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without
notice information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to
press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ
Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Qualify Semi-Conductors
ELECTRICAL CHARACTERISTICS
(Tc = 25
C
C unless otherwise noted) (Note 2)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (Note 3)
(l
c
= 0.1 Adc, I
B
= 0)
Collector Cutoff Current
(V
C
E = 60 Vdc, IB = 0)
(V
C
E = 80 Vdc, I
B
= 0)
Collector Cutoff Current
(V
CE
= 6° Vdc, V
BE
(
0
ff)
(V
CE
= 80 Vdc, V
6
E(off)
(V
CE
= 60 Vdc, V
BE(0
tf)
(V
CE
= 80 Vdc, V
BE
(off)
Collector Cutoff Current
(V
CB
= 60 Vdc, I
E
= 0)
(V
C
B = 80 Vdc, IE = 0)
Emitter Cutoff Current
(VBE = 5.0 Vdc, l
c
= 0)
ON CHARACTERISTICS
DC Current Gain (Note 3)
(l
c
= 1.5 Adc, VCE = 2.0 Vdc)
(l
c
= 4.0 Adc, V
CE
= 2.0 Vdc)
Collector-Emitter Saturation Voltage (Note 3)
(l
c
= 1.5 Adc, IB = 0.15 Adc)
(l
c
= 4.0Adc, I
B
= 1.0 Adc)
Base-Emitter On Voltage (Note 3)
(l
c
= 1.5 Adc, VCE = 2.0 Vdc)
DYNAMIC CHARACTERISTICS
Current-Gain — Bandwidth Product
(l
c
= 1 .0 Adc, VCE = 10 Vdc, f = 1 .0 MHz)
2. Indicates JEDEC registered data.
3. Pulse Test: Pulse Width < 300 (is, Duty Cycle < 2.0%.
hfE
VcEO(sus)
j
Symbol
j
Min
Max
J_ Unit_|
Vdc
2N5194
2N5195
!CEO
60
80
-
-
„
_
-
-
-
-
-
—
-
mAdc
1.0
1.0
2N5194
2N5195
ICEX
=
=
=
=
1 .5 Vdc)
1 .5 Vdc)
1.5 Vdc, T
c
= 125°C)
1.5 Vdc, T
c
= 125°C)
2N5194
2N51 95
2N5194
2N5195
2N5194
2N5195
ICBO
mAdc
0.1
0.1
2.0
2.0
mAdc
0.1
0.1
1.0
!EBO
mAdc
-
25
20
10
7.0
100
80
-
2N5194
2N5195
2N5194
2N5195
VcE(sat)
Vdc
-
-
-
0.6
1.4
1.2
Vdc
VeE(on)
f
T
2.0
-
MHz
TO-225
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M.1982,
2, CONTROLLING DIMENSION: INCH.
3 077-01 THRU -08 OBSOLETE, NEW STANDARD
077-09.
INCHES
MILLIMETERS
DIM
A
B
C
D
f
G
H
J
K
M
Q
F)
S
U
V
MIN
MAX
MIN
10.80
7.50
2,42
MAX
11.04
7,74
2.66
0.66
3.30
0.425
0.435
0,295
0.305
0,095
0.105
0,020
0,026
0.130
0.115
0.094
BSC
0.050
0,095
0.015
0.025
0.575
0.655
— SJJLj
2.93
2.39
1.27
0.39
BSC
2,41
0.63
14.61
16.63
5
C
'
0.148
0.045
0,025
0145
rvp
0.158
0.065
0.035
0.155
5"
3.76
1,15
0,64
3,69
1,02
ryp
4.01
1,65
0.88
3,93
0,040
—
—
STYLE 1:
PIN1.
2
3
EMITTER
COLLECTOR
BASE
FPGA/CPLD
京公网安备 11010802033920号
EEWORLD
