<£e.mi-Con.aiLckoi ^Pi
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
,
fine.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2N5452-2N5454
Dual N-Channel JFET
General Purpose Amplifier
GENERAL DESCRIPTION
Matched FET pairs lor differential amplifiers. This family
of general purpose
FETs Is
characterized for low and medi-
um
frequency
differential amplifier applications requiring low
drift and low offset voltage.
FEATURES
• Low Olfset Voltage
• Low Drift
• Low Capacitance
• Low Output Conductance
PIN CONFIGURATION
TO-71
ABSOLUTE MAXIMUM RATINGS
(TA-26°C unless otherwise noted)
Gate-Source or Gate Drain Voltage
(Note 1)
-50V
Gate Current (Note 1)
60mA
Storage Temperature Range
-65'C to + ZOO'C
Operating Temperature Range
- SS'C to +150'C
Lead
Temperature (Soldering, 10aec)
-I- 300'C
One Side Both Sides
Power Dissipation (T
c
- 85'C) ..
250mW
500mW
Derate above 25'C
2.9mW/'C 4.3mW/°C
,,-MM
\l
6037
0,
'
NOTE:
Satttei stxvf those I/sled under "Absolute Mm/mum Ratings"
may cause permanent damage to the device. These are stress ratings only
and functional off/alien of uie device it these er any other eonditimf
ibovethoielridhatedhtheapeistJonaliectcniotlliespecttlcetlaratanat
Implied. Exposure to absolute iroMnum fating mndXcns lor extendedperi-
ods may affect device retlau/ltf.
ORDERING INFORMATION
ELECTRICAL CHARACTERISTICS
Symbol
loss
BVass
VescoH)
Param*tir
Gate Havana Currant
T
A
=160°C
Cote-Source Breakdown
Voltage
Gate-Source Cutoff Voltaga
Gate-Source Voltage
Gate-Source Forward Voltage
Saturation Drain Current
(TA-25
0
C unless otherwise specified)
Taat Condition!
2N64S2
Mln
Max
Mln
2NK453
Max
-100
2N6454
Mm
Max
-100^
-200
Unite
pA
nA
V
as
«--30V.V
DS
=0
Vrj8-0,l
8
=-1|»A
Vus=20V, !
D
-lnA
V
D
3-20V, lo^SOjiA
-100
-200
-60
-1
-SO
_200
-50
-4.5
-4.2
2
-4.E
-«
2
-1
-1
-0.2
-4.5
-4.2
V
Vas
VGSIO
less
-0.2
-0.2
Vos-o.ia=imA
VDS-MV.VQS-O
0.6
2
0,6
5.0
mA
5.0
0.5
5.0
NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without
notice information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to
press. However MJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. N J
Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
2N5452-2N5454
ELECTRICAL CHARACTERISTICS
Symbol
(Continued) 0^=25*0 unless Otherwise specified)
Tut Cm
iWoffl
Common-Source Forward
Tianrondiirtinc.
|
(Notl)2)
Common-Source Output
Conductance
Vos=20V, 10-200^
VDS-ZOV,VQS-O
f-1MHl
Vtxj=10V.ls-=0
V
0
8-wv.vas=o
V6s=»V.V
as
-0
Ro=10MO
V
DS
=20V.V
88
-0
V
cs
-20V.b-200uA
f»1kHl
Common-Source Input
Capacitance (Note 2)
Common-Source Reverse
Traratar Capacitance (Note 2)
Drain-Gate Capacitance (Note 2)
Equivalent Short Circuit
Input Noise Voltage
Common-Source Spot
Note* Figure (NoM 2)
Drain Saturation Currant Ratio
Differential Qate-Source
Voltage
f=1kHl
VDS-HW, Vas-o
f- 100MHz
f^tKHz
2NI 4S2
2NI 453
2N«
4S4
Mln Mot
1000
1000
Mln MM Mtn
Max
3000
1000
3000
3.0
1.0
4.0
1000
Unite
a*
So,
3000
1000
3.0
1.0
4.0
1.2
1.5
20
05
1000
3,0
1,0
4.0
1.2
1.6
20
0.5
P
a
Cto
Cm,
Cdgo
«n
i.a
1.S
20
0.5
0.8S
PF
nV
35
dB
NF
IDSSI/IDSSZ
IVOSI-VQSJ!
f=ioom
0,95
1.0
S.O
0.95
1.0
1.0
16.0
10.0
0.8
1.0
0.97
AlVosi-Vaszl Qate-Sourc* Voltage
DHt«rantlal Change
AT
with Temperature
9«1/8ti2
Trareconductance Ratio
Differential Output Conductance
T-aPcto^es'C
T-aircto
-H26-C
0.4
0.5
0.97
2.C
2.5
0.95
mV
1-1 KH*
1.0
0.25
1.0
0.2S
1.0
0.26
ftnrfliMll
cs
NOTES: 1. P»r trarnljlor.
2. FOf design reference only, not 100« leated.
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