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2N5492

Description
Silicon NPN Power Transistors
CategoryDiscrete semiconductor    The transistor   
File Size91KB,4 Pages
ManufacturerNew Jersey Semiconductor
Websitehttp://www.njsemi.com
Download Datasheet Parametric Compare View All

2N5492 Overview

Silicon NPN Power Transistors

2N5492 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknow
Maximum collector current (IC)7 A
Collector-emitter maximum voltage55 V
ConfigurationSINGLE
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Transistor component materialsSILICON
Nominal transition frequency (fT)0.8 MHz
Base Number Matches1
ioducts., Line.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
Silicon NPN Power Transistors
2N5490 2N5492 2N5494 2N5496
DESCRIPTION
•With TO-220 package
•High power dissipation
APPLICATIONS
•For used in medium power and
amplifier applications
PINNING
PIN
1
2
3
9
i.i i .
1 2 3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-220Q <in<l symbol
Absolute maximum ratings(Ta=25n)
SYMBOL
PARAMETER
2N5490/5494
VCBO
Collector-base voltage
2N5492
2N5496
2N5490/5494
VCEO
Collector-emitter voltage
2N5492
2N5496
VEBO
Ic
IB
PD
Tj
Tstg
CONDITIONS
VALUE
60
UNIT
Open emitter
75
90
40
V
Open base
55
70
V
Emitter-base voltage
Collector current
Base current
Total power dissipation
Junction temperature
Storage temperature
Open collector
5
7
3
V
A
A
W
-
-
T
C
=25
L
50
150
-65-150
THERMAL CHARACTERISTICS
SYMBOL
Rth |-c
PARAMETER
Thermal resistance from junction to case
*MAX
2.5
UNIT
A/V
Quality Semi-Conductors

2N5492 Related Products

2N5492 2N5490 2N5494
Description Silicon NPN Power Transistors Silicon NPN Power Transistors Silicon NPN Power Transistors
Is it Rohs certified? incompatible incompatible incompatible
Reach Compliance Code unknow unknow unknow
package instruction FLANGE MOUNT, R-PSFM-T3 - FLANGE MOUNT, R-PSFM-T3
Maximum collector current (IC) 7 A - 7 A
Collector-emitter maximum voltage 55 V - 40 V
Configuration SINGLE - SINGLE
JESD-30 code R-PSFM-T3 - R-PSFM-T3
JESD-609 code e0 - e0
Number of components 1 - 1
Number of terminals 3 - 3
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR
Package form FLANGE MOUNT - FLANGE MOUNT
Polarity/channel type NPN - NPN
Terminal surface Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE - THROUGH-HOLE
Terminal location SINGLE - SINGLE
Transistor component materials SILICON - SILICON
Nominal transition frequency (fT) 0.8 MHz - 0.8 MHz
Base Number Matches 1 - 1

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