Product Specification
www.jmnic.com
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-3 package
・High
breakdown
APPLICATIONS
・Switching
regulator
・Inverters
・Solenoid
and relay drivers
・Motor
controls
PINNING
PIN
1
2
3
Base
Emitter
Collector
DESCRIPTION
2N5804 2N5805
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
PARAMETER
2N5804
Collector-base voltage
2N5805
2N5804
V
CEO
V
EBO
I
C
P
D
T
j
T
stg
Collector-emitter voltage
2N5805
Emitter-base voltage
Collector current
Total Power Dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
300
6
5
110
150
-65~200
V
A
W
℃
℃
Open emitter
375
225
V
CONDITIONS
VALUE
300
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
1.25
UNIT
℃/W
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2N5804 2N5805
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2N5804
V
CEO(sus)
Collector-emitter
sustaining voltage
2N5805
V
CEsat
V
BEsat
I
CEO
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Collector cut-off current
2N5804
I
CEV
Collector cut-off current
2N5805
I
EBO
h
FE
f
T
Emitter cut-off current
DC current gain
Trainsistion frequency
V
EB
=7V; I
C
=0
I
C
=5A ; V
CE
=4V
I
C
=1A ; V
CE
=10V
20
15
V
CE
=RatedV
CE
; V
BE(off)
=1.5V
10
1.0
100
MHz
mA
I
C
=5A; I
B
=1A
I
C
=5A ;I
B
=1A
V
CE
=RatedV
CE
; I
B
=0
I
C
=0.1A ;I
B
=0
300
1.0
1.5
10
12
mA
V
V
mA
CONDITIONS
MIN
225
V
TYP.
MAX
UNIT
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
PACKAGE OUTLINE
2N5804 2N5805
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
JMnic
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