£s.m.i-don.au.ckoi LPioaucti, Line.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
DARLINGTON COMPLEMENTARY
SILICON-POWER TRANSISTORS
...designed
lor
general-purpose power amplifier and low frequency
switching applications
FEATURES:
* Monolithic Construction with Butt-in Base-Emitter Shunt Resistors.
* High DC Current Gain -
hFE = 3500(typ)<&l
c
MAXIMUM RATINGS
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
PNP
NPN
2N6050 2N6057
2N6051 2N6058
2N6052 2N6059
DARLINGTON
12AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60-100 VOLTS
150 WATTS
Characteristic
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
-Peak
Base Current
Total Power Dissipation©^ 25°C
Derated above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Symbol
2N6050
2N6057
VCEO
VCBO
60
60
2N6051
2N60S8
80
80
5
2N6052
2N6059
100
100
Unit
V
V
V
A
"no
'c
'B
PO
L -T.TO
12
20
0.2
TO-3
A
150
0.857
-65 to +200
W
W/°C
°C
Characteristic
Thermal Resistance Junction to Case
Symbol
Rejc
Max
1.17
Unit
"C/W
PIN 1.BASE
2-EM(TTER
COLLCCTOR4CASE)
FIGURE-1 POWER DERATING
175
150
125
100
75
50
25
2S
50
75
100
125
150
175
200
DM
A
MILLIMETERS
MIN
MAX
B
C
0
E
F
G
H
I
J
K
T
0
, TEMPERATURE(« C)
38.75
19.28
7.96
11.18
25.20
0.92
1.38
29.90
16.64
3.88
10.67
39.96
22.23
9.28
12.18
26.67
1.09
1.62
30,40
17.30
4.36
11.18
NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without
notice intbrmation furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time or"going to
press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use, NJ
Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
ELECTRICAL CHARACTERISTICS (T. = 25*C unless otherwise noted )
Characteristic
OFF CHARACTERISTICS
Collector - Emitter Sustaining Voltage (1)
( I = 100 mA, I. - 0 )
,
2N6050, 2N60S7
2N6051, 2N6058
2N6052, 2N6059
Collector Cutoff Current
( V
c
, = 30 V, 1, = 0 )
(V
e
, = 40V, l, = 0)
( V
CB
= 50 V, 1. = 0 )
VCECMSU*)
Symbol
Win
Max
Untt
V
60
80
100
2N6050, ZN6057
2N6051.2N605S
2N6052, 2N6059
'CEO
mA
1.0
1.0
1.0
Collector Cutoff Current
(V
CB
= Rated V
ei0)
V
iI(
^ = 1.5V)
( V
el
= Rated V
C10
, V,^ =. 1 .5 V, T
c
= 150°C )
Emitter Cutoff Current
(V
EB
= S.OV,I
C
= 0)
ON CHARACTERISTICS (1)
DC Current Gain
(I
C
= 6.0AV
CE
= 3.0V)
(I
C
= 12A,V
CE
= 3.0V)
Collector-Emitter Saturation Voltage
(I
C
= 6.0A, !
B
= 24mA)
(I
C
=12A I
B
= 120mA)
Base-Emitter On Voltage
(I
C
= 6.0AV
CE
= 3.0V)
Base-Emitter Saturation Voltage
(I
C
= 12A !
B
=120mA)
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product (2)
( l
c
= 5.0 A V
CE
= 3.0 V, f = 1 .0 MHz )
Small-Signal Current Gain
{ l
c
= 5.0 A V
CE
a 3.0 V, f = 1.0 KHZ )
(1) Pulse Test: Pulse width 5 300 us , Duty Cycle £ 2.0%
'CEX
mA
0.5
5.0
'EBO
mA
2.0
hFE
750
100
V
CE(
»,,
18000
V
2.0
3.0
V
2.8
V
4.0
V
BE(on)
VBE
(
»«,
'T
MHz
4.0
"•
300
Embedded System
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