i, Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
HIGH-POWER PNP SILICON TRANSISTORS
... designed for use in industrial power amplifiers and switching
circuit applications.
FEATURES:
* High DC Current Gain
hFE=20-80©l
c
=10A
=12 (Min)®l
c
=25A
* Low Collector-Emitter Saturation Voltage
VCBSATI • 1 -0V (Max.) @ l
c
= 10 A, I
B
= 1 .OA
* Complement to 2N6338 thru 2N6340
MAXIMUM RATINGS
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
PNP
2N6436
2N6437
2N6438
Characteristic
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
-Peak
Base Current
Total Power Dissipation @T
C
=25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol 2N6436
VCEO
V
CBO
2N6437
100
120
6.0
2N6438
120
140
Unit
V
V
V
A
25 AMPERE
POWER TRANSISTOR
PNP SILICON
80-120 VOLTS
200 WATTS
80
100
VEBO
•c
25
50
10
TO-3
'B
PD
Tj 'TaTQ
A
200
1.14
W
W/°C
°C
f
I
J
-^
~l
D
l
H
1
-65 to +200
J
A
\
X
1
2
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance Junction to Case
Symbol
"X
f
Max
0.875
Unit
>
1 ,
<£) JK |E
A
Rejc
°c/w
FIGURE -1 POWER DERATING
PIN 1.BASE
2.EMTTTER
COLLECTOR (CASE)
200
§175
|150
2 125
|100
1 75
25
x
MILLIMETERS
\
N
MIN
A
B
C
D
E
F
G
H
I
J
K
I
MAX
39.96
22.23
9.28
12.19
26.67
1.09
1.62
30.40
17.30
4.36
11.18
s
X
x
i^
&
X
s.
X
175
)
25
50
75
100
125
150
N
38.75
19.28
7.96
11.18
2520
092
1.38
2990
16.64
3.sa
10.67
200
T
c
, TEMPERATUREC'C)
2N6436, 2N6437,2N6438 PNP
ELECTRICAL CHARACTERISTICS
Characteristic
OFF CHARACTERISTICS
Collector -Emitter Sustaining Voltage (1)
( I =50 mA, I
B
= 0 )
2N6436
2N6437
2N6438
2N6436
2N6437
2N6438
V
CKX«»)
( T
c
= 25
d
C unless othervuse noted )
Symbol
Mln
Max
Unit
V
80
100
120
UA
50
50
50
UA
10
uA
100
Collector Cutoff Current
( V
e(
= 40 V, ! • 0 )
.
(V
CB
=50V, l.= 0)
( V
CI
= 60 V, l,= 0 )
Collector Cutoff Current
(V
CB
= Rated V
CB
, l
e
= 0 )
Emitter Cutoff Current
(V
EB
=6.0V, l
c
=0)
ON CHARACTERISTICS
(1)
DC Current Gain
(l
c
=0.5A,V
ce
=2.0V)
(I
C
=10A,V
CE
=2.0V)
( lc= 25 A, V
CE
= 2.0V )
Collector-Emitter Saturation Voltage
(I
C
=1PA,I
B
=1.0A)
( l
c
= 25 A, I
B
= 2.5A )
Base-Emitter Saturation Voltage
(I
C
=10A, I
B
=1.0A)
(I
C
=25A, I
B
=2.5A)
DYNAMIC CHARATERISTICS
Current-Gain Bandwidth Product (2)
(I
0
= 1.0 A,V
CE
= 10 V, f= 10MHz )
Output Capacitance
(V
CB
= 10 V, I
E
= 0, fs 0.1MHz )
SWITCHING CHARACTERISTICS
Rise Time
Storage Time
Fall Time
V
CC
=80V, I
C
=10A
!
B1
*-l
Bf
=1.0A,
'CEO
ICBO
IEBO
hFE
30
20
12
VeaiMt
80
V
1.0
1.8
V
Vm
*
1.8
2.5
MHZ
'T
40
PF
700
c*
t,
t
s
0.3
2.0
0.4
us
us
us
t,
2.0%
(1) Pulse Test: Pulse width • 300 us , Duty Cycle
(2>f
T
= I h . J - f ^
京公网安备 11010802033920号
EEWORLD
