Cs
(l
Ei3.su
£Pioauct±, LJna.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
USA
HIGH VOLTAGE NPN SILICON POWER TRANSISTORS
... designed for high voltage inverters, switching regulators and line operated
amplifier applications.
FEATURES:
* Collector-Emitter Sustaining Voltage-
V
CIO
_™ « 250 V (Min) -2N6497
= 300 V (Min) -2N6498
= 350 V (Min) -2N6499
* DC Current Gain
hFE = 10-75 Q I
C
=2.5A
MAXIMUM RATINGS
NPN
2N6497
2N6498
2N6499
5 AMPERE
POWER TRANSISTORS
250-350 Volts
80 Watts
2N6498
2N6499
350
450
Characteristic
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
-Peak
Base Current
Total Power DlsslpatlontST
c
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance Junction to Case
Symbol
2N6497
VCEO
VCBO
VEBO
Unit
V
V
250
350
300
400
6.0
V
A
«c
'a
p
o
5.0
10
2.0
TO-220
A
Y
80
0.64
-65
to
+150
—IF
W
W/°C
°C
'
i_
1 2
^
3
TjT
«-
rL
L
jt'
MILLIMETERS
MIN
MAX
''ff
Symbol
Rejc
Max
1
.56
Unit
PIN
.BASE
Z.COLL6CTOR
J.EMITTER
1 COLLECTOR(CASE)
°C/W
DIM
80
&
70
|60
| 50
FIGURE -1 POWER DERATING
"v
\.
1
*°
1 30
i
20
* 10
"• o
a
\
X
V
\5
50
75
i
G
T
c
, TEMPERATURE(»C)
14.68
978
501
1306
3.57
2.42
1.12
0.72
4.22
J
1.14
K
2.20
L
0.33
125
M 100 2.46
3.70
A
B
C
D
E
F
G
H
1531
10.42
652
14.62
4.07
3.66
136
0.96
4.98
1.38
2.97
0.55
150
2.98
3.90
NJ Scmi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without
not,ce ,ntonnat.on tum.shcd by NJ Semi-Conductors is believed to be both accurate and reliable at the time of goTng to
press. However NJ Sem.-Conductors assumes no responsibility for any errors or omissions discovered in its use NJ
Semi-Conductors encourages customers to verify that datasheets are current before placing orders,
Quality Semi-Conductors
2N6497,2N6498.2N6499 NPN
ELECTRICAL CHARACTERISTICS <
T
c
- 25°C unless otherwise noted )
Characteristic
OFF CHARACTERISTICS
Collector - Emitter Sustaining Voltage (1)
( l
c
= 25 mA, I
B
= 0 )
2N6497
2N6498
2N6499
Versus)
V
250
300
350
mA
1.0
1.0
1.0
10
10
10
mA
1.0
Symbol
Min
Max
Unit
Collector Cutoff Current
( V
CI
« 350 V, V
tl(-n
= 1 .5 V )
( V
£I
* 400 V, V
Bewn
= 1 .5 V )
( V
eK
« 450 V, V
1K(0
_ = 1 .5 V )
( V
e(
= 175 V, V,...- = 1,5 V, T
c
= 100°C )
( V
CI
= 200 V, V
BB((>
_ = 1 ,5 V, T
c
= 100°C )
( V
CE
= 225 V, V
1B(011|
= 1 .5 V, T
e
= 100°C )
Emitter Cutoff Current
<V
ra
= 6.0V,l
c
= 0)
ON CHARACTERISTICS
(1)
DC Current Gain
(I
C
= 2,5A,V
C E
=10V)
(I
C
= 5.0A, V
c i
=10V)
Collector-Emitter Saturation Voltage
(I
C
= 2.5A,L = 0.5A)
( l
c
= 5.0 A, IB = 2.0 A )
Base-Emitter Saturation Voltage
( l
c
= 2.5 A, I
B
= 0.5 A )
(I
C
= 5.0A, I
B
= 2.0A)
DYNAMIC
CHARACTERISTICS
2N6497
2N6498
2N6499
2N6497
2N6498
2N6499
CEX
<EBO
hr
c
10
3.0
CE(«t)
75
V
1.0
1.25
15
5.0
2N6497
2N6498
2N6499
All Devices
V
BB(ra
«,
V
1.5
2.5
Current-Gain-Bandwidth Product (2)
( l
c
= 250 mA, V
CE
= 10 V, f = 1.0 MHz )
SWITCHING CHARACTERISTICS
Rise Time
Storage Time
Fall Time
V
CC
= 125V
l
c
a 2.5 A
I
B
,=-I
B2
= 0.5A
t =0.1 ms
Duty Cycle S2.0%
MHz
'T
5.0
<r
1.0
us
us
us
*.
tf
2.5
1.0
(1) Pulse Test: Pulse width = SOO^is , Duty Cycle
S
2.0%
(2)f
T
= lh,.l -f
(M
,
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