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2N6530

Description
NPN POWER TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size90KB,3 Pages
ManufacturerNew Jersey Semiconductor
Websitehttp://www.njsemi.com
Download Datasheet Parametric Compare View All

2N6530 Overview

NPN POWER TRANSISTOR

2N6530 Parametric

Parameter NameAttribute value
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknow
Maximum collector current (IC)8 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Transistor component materialsSILICON
Nominal transition frequency (fT)20 MHz
Base Number Matches1
i, One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
2N6S30
2N6531
2N6532
2N6533
NPN POWER TRANSISTOR
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
TO-220 CASE
MAXIMUM RATINGS: (T
C
=25°C unless otherwise noted)
SYMBOL
V
CBO
V
CER
V
CEV
V
CEO
V
EBO
2N6530
80
80
80
80
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
2N6531
100
100
100
100
5.0
8.0
15
65
2N6532
100
100
100
100
2N6533
120
120
120
120
UNITS
V
V
V
V
V
A
A
W
°C
'c
"CM
PD
T
J-
T
stg
©JC
-65 to +150
1.92
°C/W
ELECTRICAL CHARACTERISTICS : (Tc=25°C unless otherwise noted)
2N6530
2N6531
2N6532
SYMBOL
TEST CONDITIONS
MIN MAX
MIN MAX
MIN MAX
1.0
"CEO
V
CE
=Rated V
CEO
1.0
1.0
!
CEV
2N6533
MIN
MAX
1.0
0.5
5.0
5.0
120
120
120
2.0
UNITS
mA
mA
mA
mA
V
V
V
V
V
V
V
V
V
V
CE
=Rated V
CEV
V
EB
=1.5V
V
CE
=Rated V
CEV
V
EB
=5.0V,T
C
=125°C
0.5
5.0
5.0
80
80
80
2.0
3.0
2.8
4.5
100
100
100
0.5
5.0
5.0
100
100
100
3.0
3.0
2.8
4.5
0.5
5.0
5.0
'CEV
'EBO
BV
CER
BV
CEO
BV
CEV
V
CE(SAT)
V
CE(SAT)
V
CE(SAT)
V
BE(ON)
V
BE(ON)
v
EB
=s.ov
lc=200mA, R
BE
=100£i
lc=200mA
l
c
=200mA, V
EB
=1 .5V
lc=3.0A, !
B
=6.0mA
I
C
=5.0A, !
B
=10mA
lc=8-OA, !
B
=80mA
V
CE
=3.0V, I
C
=3.0A
Vc
E
=3.0V, lc=5.0A
VQ
E
=3.0V, lc=8.0A
2.0
3.0
2.8
4.5
3.0
2.8
4.5
VBE(ON)
NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without
notice information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to
press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ
Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors

2N6530 Related Products

2N6530 2N6531 2N6532 2N6533
Description NPN POWER TRANSISTOR NPN POWER TRANSISTOR NPN POWER TRANSISTOR NPN POWER TRANSISTOR
Reach Compliance Code unknow unknow unknow unknow
Base Number Matches 1 1 1 1
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 - FLANGE MOUNT, R-PSFM-T3
Maximum collector current (IC) 8 A 8 A - 8 A
Collector-emitter maximum voltage 80 V 80 V - 80 V
Configuration SINGLE SINGLE - SINGLE
JESD-30 code R-PSFM-T3 R-PSFM-T3 - R-PSFM-T3
Number of components 1 1 - 1
Number of terminals 3 3 - 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR - RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT - FLANGE MOUNT
Polarity/channel type NPN NPN - NPN
Terminal form THROUGH-HOLE THROUGH-HOLE - THROUGH-HOLE
Terminal location SINGLE SINGLE - SINGLE
Transistor component materials SILICON SILICON - SILICON
Nominal transition frequency (fT) 20 MHz 20 MHz - 20 MHz
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