na..
i, U
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
USA
NPN 2N3773*, PNP 2N6609
Complementary Silicon
Power Transistors
The 2N3773 and 2N6609 are PowerBase™ power transistors
designed for high power audio, disk head positioners and other linear
applications. These devices can also be used in power switching
circuits such as relay or solenoid drivers, DC-DC converters or
inverters.
Features
Pb-FreePackages are Available**
High Safe Operating Area (100% Tested) 150 W
@
100 V
Completely Characterized for Linear Operation
High DC Current Gain and Low Saturation Voltage
h
FE
= 15 (Min)
(a).
8.0 A, 4.0 V
VcE(sat) = L4 V (Max) @ I
c
= 8.0 A, I
B
= 0.8 A
• For Low Distortion Complementary Designs
MAXIMUM
RATINGS
(Note 1)
Rating
Collector - Emitter Voltage
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
Collector Current
- Continuous
- Peak (Note 2)
Base Current
- Continuous
- Peak (Note 2)
Total Power Dissipation @ TA = 25°C
Derate above 25' C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCEX
VCBO
VEBO
Value
140
160
160
7
16
30
Adc
4
15
150
0.855
W
W/°C
r
c
•
•
•
•
16 A COMPLEMENTARY
POWER TRANSISTORS
140V, 150 W
MARKING
DIAGRAM
Unit
TQ-204
Vdc
Vdc
Vdc
Vdc
Adc
ic
xxxx
A
YY
WW
= 3773 or 6609
= Assembly Location
= Year
= Work Week
IB
PD
T
J.
T
s
tg
-65 to +200
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. Indicates JEDEC Registered Data.
2. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction-to-Case
Symbol
Rejc
Max
Unit
'CAN
1.17
NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without
notice information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to
press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ
Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
NPN 2N3773*, PNP 2N6609
ELECTRICAL CHARACTERISTICS
(Tc = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
(Note 3)
Collector-Emitter Breakdown Voltage (Note 4)
(l
c
= 0.2 Adc, IB = 0)
Collector-Emitter Sustaining Voltage (Note 4)
(l
c
= 0.1 Adc, VBE(OID =
1
-
5vdc
.
R
BE = 100 Ohms)
Collector-Emitter Sustaining Voltage
(l
c
= 0.2 Adc, R
BE
= 100 Ohms)
Collector Cutoff Current (Note 4)
(V
CE
=120Vdc, I
B
= 0)
Collector Cutoff Current (Note 4)
(V
CE
= 140 Vdc, V
BE
(
off
) = 1.5 Vdc)
(V
CE
= 140 Vdc, V
BE
(off) = 1-5 Vdc, T
c
= 150'C)
Collector Cutoff Current
(Vc
B
= 140Vdc, I
E
= 0)
Emitter Cutoff Current (Note 4)
(V
BE
= 7 Vdc, i
c
= 0)
ON CHARACTERISTICS
(Note 3)
DC Current Gain
(l
c
= 8 Adc, V
CE
= 4 Vdc) (Note 4)
(l
c
= 16Adc,V
CE
= 4Vdc)
Collector-Emitter Saturation Voltage
(l
c
= 8 Adc, IB = 800 mAdc) (Note 4)
(lc = 16 Adc, IB = 3.2 Adc)
Base-Emitter On Voltage (Note 4)
(l
c
= 8 Adc, VCE = 4 Vdc)
DYNAMIC CHARACTERISTICS
Magnitude of Common-Emitter
Small-Signal, Short-Circuit, Forward Current Transfer Ratio
(l
c
= 1 A, f = 50kHz)
Small-Signal Current Gain (Note 4)
(l
c
= 1 Adc, V
CE
= 4 Vdc, f = 1 kHz)
SECOND BREAKDOWN CHARACTERISTICS
Second Breakdown Collector Current with Base Forward Biased
t = 1 s (non-repetitive), V
CE
= 100 V, See Figure 12
3, Pulse Test: Pulse Width = 300 us, Duty Cycle
£ 2%.
4.
Indicates JEDEC Registered Data.
's/b
Symbol
Min
Max
Unit
VCEO(SUS)
VCEX(SUS)
V
CER(5U5)
140
160
150
-
-
-
-
10
Vdc
Vdc
Vdc
mAdc
mAdc
ICEO
ICEX
-
ICBO
IEBO
2
10
2
5
mAdc
mAdc
—
-
HFE
15
-
5
VcE(sat)
60
-
Vdc
-
-
VBE(OI)
1.4
4
2.2
—
Vdc
Ihfel
4
"
-
"
-
hfe
40
1.5
_
Adc
Industrial Control Electronics
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