J.£ii£U
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
,
Dnc.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
Silicon NPN Power Transistor
2N6754
DESCRIPTION
• Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 500(Min.)
• High Switching Speed
• Low Collector Saturation Voltage
• Wide Area of Safe Operation
APPLICATIONS
• Off-line power supplies
• High-voltage inverters
• Switching regulators
1
f
^
|
2
3
J
PIN
1.BASE
2. EMITTER
3. COLLECT OR (CASE)
TO-3 package
ABSOLUTE MAXIMUM RATINGS(T
a
=25°C)
SYMBOL
VCEV
VcEX(SUS)
VcEO(SUS)
PARAMETER
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Collector Power Dissipation@T
c
=25'C
Junction Temperature
Storage Temperature
VALUE
UNIT
1000
550
500
8
10
10
5
150
175
-65-200
V
V
V
V
A
A
A
W
,[
i
IE
1
I
^A
TTV
^^
C
{_
_i
t
G
B
VEBO
"A
Ic
ICM
IB
PC
Tj
T
stg
H
f
i
DM
A
B
C
D
E
<L
H
K
L
N
Q
U
V
^*T
^"^JJ
iffl
^XJ
V
/'
^-oa
I1WI1
•c
r
THERMAL CHARACTERISTICS
SYMBOL
Rthj-c
PARAMETER
Thermal Resistance, Junction to Case
MAX
1.0
UNIT
"C/W
MM
MA
I
3900
2530 261
i7
7.80
8:
«
0.90
1 1
0
1.40
11
O
i
10.92
546
1140 13.i
iO
1675 171
B
19.40 19*
C
400
4;
»
MOO 30-
20
4.30
4.i
SO
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified
SYMBOL
VcEO(SUS)
2N6754
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Current Gain-Bandwidth Product
Output Capacitance
CONDITIONS
lc= 200mA; I
B
= 0
lc= 5A; I
B
= 1A
MIN
500
MAX
UNIT
V
VcE(sat)-l
1.0
3.0
1.3
0.1
1.0
2.0
8
15
50
40
60
250
V
V
V
mA
VcE(sat)-2
I
C
=10A;I
B
=3A
l
c
= 5A; I
B
= 1A
VeE(sat)
ICEV
V
C
E=1000V;V
B
E=-1.5V
VCE= 1000V; V
BE
= -1 .5V; T
C
=100°C
V
EB
= 8V; l
c
= 0
lc= 5A ; VCE= 3V
I
C
=0.2A;V
G
E=10V
I
E
=0;V
CB
= 10V; f= 0.1MHz
IEBO
mA
h
FE
fr
COB
MHz
PF
Switching times-Resistive Load
td
V
Delay Time
Rise Time
Storage Time
Fall Time
0.1
0.4
3.0
0.4
us
us
lc= 5A; I
B
1= -!BZ= 1A; V
C
c= 250V;
V
BE
= -6V; t
p
= 20 u S
ts
tf
us
us
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