C/
Jeiizu <^>£.nii-(-onauetoi iJ-^ 10 ducts., One.
iJ
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistor
DESCRIPTION
• Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 450V(Min)
• High Switching Speed
APPLICATIONS
• Designed for high-voltage .high-speed, power switching in
inductive circuits where fall time is critical. They are partic-
ularly suited for line operated switch-mode applications.
Typical applications:
• Switching regulators
• Inverters
• Solenoid and relay drivers
• Motor controls
• Deflection circuits
ABSOLUTE MAXIMUM RATINGS(T
a
=25°C)
SYMBOL
VCEV
VcEO(SUS)
2N6833
PIN 1.BASE
2.COLLECTOR
3.a/IITTER
TO-220C package
1 2 3
PARAMETER
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Base Current-Peak
Collector Power Dissipation@T
c
=25°C
Junction Temperature
Storage Temperature
VALUE
850
450
6
5
10
4
8
80
150
UNIT
V
V
V
A
A
A
A
W
VEBO
Ic
ICM
IB
IBM
PC
Tj
T
stg
mm
DIM
WIN
A
15.70
B
C
D
F
G
•c
•c
-65-150
H
J
K
L
Q
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal Resistance.Junction to Case
MAX
UNIT
1.56
•c/w
R
S
U
tf
9.90
4.20
0.70
3.40
4.98
2.70
0.44
13.20
1.10
2.70
2.50
1.29
6.45
8.66
MAX
15.90
10.10
4.40
0.90
3.60
5.18
2.90
0.46
13.40
1.30
2.90
2.70
1.31
6.65
8.86
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
Silicon NPN Power Transistor
ELECTRICAL
CHARACTERISTICS
2N6833
T
C
=25'C
unless otherwise specified
SYMBOL
VcEO(SUS)
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
Current Gain-Bandwidth Product
Output Capacitance
CONDITIONS
l
c
=100mA;l
B
=0
lc=1.5A; I
B
=0.15A
lc= 3A; I
B
= 0.4A
lc=3A;l
B
=0.4A,T
c
=100'C
l
c
= 3A; I
B
= 0.4A
ic=3A;l
B
=0.4A,Tc=100°C
MIN
450
TYP.
MAX
UNIT
V
VcE(sat)-i
VoE(sat)-2
1.0
V
V
V
mA
mA
mA
2.5
2.5
1.5
1.5
0.25
1.5
2.5
1.0
7.5
5
15
20
75
200
30
VsE(sat)
ICEV
ICER
IEBO
hpE-1
V
C
EV=850V;V
BE
<off)=1.5V
VCEV= 850V;V
BE
«,«r 1.5V;T
C
=100'C
V
CE
= 850V; R
BE
= 50 fi ,T
C
= 100'C
V
EB
= 6.0V; l
c
=0
lc= 3A ; V
CE
= 5V
lc= 5A ; VCE= 5V
lc= 0.25A;V
CE
= 10V; f
test
=10MHz
l
E
=0;VcB=10V;ftest=1 OkHz
hpE-2
fr
COB
MHz
PF
Switching times;Resistive Load
td
tr
ts
tf
Delay Time
Rise Time
Storage Time
Fall Time
I
G
= 3A , V
c
o= 250V;
lei= 0.4A; I
B2
= -0.8A;
Pw= 30 u s; R
B2
= 8
fi
Duty Cycle=£2.0%
0.03
0.1
1.0
0.1
0.3
3.0
0.3
us
us
us
us
0.06
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