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TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistor
DESCRIPTION
• Collector-Emitter Sustaining Voltage-
:V
CE
o(sus)=450V(Min)
• High Switching Speed
APPLICATIONS
• Designed for high-voltage .high-speed, power switching in
inductive circuits where fall time is critical. They are partic-
ularly suited for line operated switch-mode applications.
Typical applications:
• Switching regulators
• Inverters
• Motor controls
• Deflection circuits
ABSOLUTE MAXIMUM RATINGS(T
a
=25°C)
SYMBOL
VCEV
VCEO(SUS)
2N6835
PIN 1.BASE
2. EMITTER
3. COLLECT OR (CAS E)
TO-3 package
PARAMETER
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Base Current-Peak
Collector Power Dissipation@Tc=25'C
Junction Temperature
Storage Temperature
VALUE
UNIT
850
450
6
8
16
6
12
150
200
-65-200
V
V
V
A
A
A
-•JU— D 2PL
!
VEBO
Ic
ICM
IB
IBM
PC
Tj
T
stg
intn
A
W
DM
A
•c
'C
B
C
D
E
Q
H
MM
MAX
3900
2S.30 26.67
790
8.30
090
1.10
140
1.60
tO.92
546
11 40
1675
19.40
4.00
30.00
4.30
13.50
170S
1962
4.20
3020
450
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Thermal Resistance.Junction to Case
K
l
MAX
1.17
UNIT
q
u
N
R(h j-c
•c/w
v
N.I Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
Tc=25°C
unless otherwise specified
SYMBOL
VcEO(SUS)
2N6835
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
Current Gain-Bandwidth Product
Output Capacitance
CONDITIONS
lc=100mA;l
B
=0
lc= 3A; I
B
= 0.4A
MIN
450
TYP.
MAX
UNIT
V
VcE(sat)-!
1.2
V
V
V
mA
mA
mA
VcE(sat)-2
lc= 5A; I
B
= 0.66A
l
c
=5A;lB=0.66A,Tc=10(rC
lc= 5A; I
B
= 0.66A
I
C
=5A;I
B
=0.66A,T
C
=100'C
V
C
Ev=850V;V
B
E(o(o=1.5V
V
CEV
= 850V;V
BE
(off)= 1.5V;T
C
=100'C
Vce= 850V; RBE= 50
Q
,T
C
= 100'C
V
e6
= 6.0V; l
c
=0
lc= 5A ; V
CE
= 5V
lc= 8A ; V
CE
= 5V
lc= 0.25A ;V
CE
= 10V; f
te
st=10MHz
l
E
=0;V
C
B=10V;f,est=1.0kHz
7.5
4
10
50
2.5
3.0
1.5
1.5
0.25
1.5
2.5
1.0
30
VBE(sat)
ICEV
ICER
IEBO
hpE-1
hFE-2
fi
COB
75
350
MHz
PF
Switching times;Resistive Load
td
tr
ts
tf
Delay Time
Rise Time
Storage Time
Fall Time
lc= 5A , V
cc
= 250V;
lei=0.66A; I
B2
=-1.3A;
Pw= 30 u s; Rs2= 4 Q
Duty Cycle=£2.0%
20
85
1000
70
50
250
ns
ns
ns
ns
2500
250
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