JEIIEU ^s.mi-L.onaucto'i L/^ioaucts., One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
Silicon NPN Power Transistor
DESCRIPTION
• Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 450V(Min)
• High Switching Speed
APPLICATIONS
• Designed for high-voltage ,high-speed, power switching in
inductive circuits where fall time is critical. They are partic-
ularly suited for line operated switch-mode applications.
Typical applications:
• Switching regulators
• Inverters
• Motor controls
• Deflection circuits
ABSOLUTE MAXIMUM RATINGS(T
a
=25°C)
SYMBOL
VCEV
VcEO(SUS)
2N6837
3
I
•)
f
™S
PIN 1.BASE
2. EMITTER
3. COLLECT OR (CASE)
2
TO-3 package
PARAMETER
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Base Current-Peak
Collector Power Dissipation@Tc=25°C
Junction Temperature
Storage Temperature
VALUE
850
450
6
20
30
15
20
250
200
UNIT
V
V
V
A
A
A
A
[^~ N~"*j
t
i
IE
VEBO
Ic
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PC
Tj
T
r
sa
/r*^\—
\
3—«
t
J
.
c
B
i
Svj ^x'
\1
\J Semi-Cond
'
mm
DM
MM
MAX
-»IU-D
—-u —»
1
1
,
I
C
:
W
'C
'C
A
8
C
D
E
G
H
Jt
N
0
39BO
2530
26j67
9-30
11.10
110
0.90
2.90
3.10
10.92
5.46
H «0
13.50
16.75
18.40
4.00
Tstg
-65-200
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
17J05
19£2
PARAMETER
Thermal Resistance.Junction to Case
MAX
0.7
UNIT
u
^
30.09
4,30
4a)
30^0
•c/w
450
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25'C unless otherwise specified
SYMBOL
VcEO(SUS)
2N6837
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
Current Gain-Bandwidth Product
Output Capacitance
CONDITIONS
l
c
=100mA; I
B
=0
lc=10A; I
B
=1.2A
I
C
=15A;I
B
=2A
l
c
=15A;l
B
=2A,T
c
=100r
lc=15A;l
B
=2A
lc=15A; l
B
=2A,Tc=100"C
V
C
Ev=850V;V
BE
(off)= 1-5V
V
C
Ev=850V;V
B
E(ofl)= 1.5V;T
C
=100'C
V
CE
= 850V; R
BE
= 50 Q ,T
C
= 1 00
'C
V
EB
= 6.0V; l
c
=0
l
c
=15A;VcE=5V
lc= 20A ; V
CE
= 5V
lc= 0.25A ;V
CE
= 10V; f
tesl
=10MHz
l
E
=0;VcB=10V;fteat=1-OkHz
MIN
450
TYP.
MAX
UNIT
V
VcE(sat)-i
VcE(sat)-2
VeE(sat)
ICEV
ICER
IEBO
hpE-1
1.0
3.0
3.0
1.5
1.5
0.25
1.5
2.5
1.0
7.5
5
10
100
75
500
30
V
V
V
mA
mA
mA
tlFE-2
fr
COB
MHz
PF
Switching times;Resistive Load
Id
tr
Delay Time
Rise Time
Storage Time
Fall Time
lc=15A,Vcc=250V;
!EM= 2A; I
B2
= -4A;
P
w
= 30 u s; R
B
2= 1 .6 Q
Duty Cycles£2.0%
0.02
0.2
1.2
0.2
0.1
0.5
2.7
us
11 S
ts
us
us
tf
0.35
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