toaucti, Una*
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2N6904
N-Channel Logic Level Power MOS
Field-Effect Transistors (L
2
FET)
8 A, 200 V
ros(on): 0.6 0
Features:
•
Design optimized tor
5
volt gate drive
• Can
be driven directly from Q-MOS,
N-MOS, TTL Circuits
•
Compatible with automotive drive
requirements
•
SOA is power-dissipation limited
•
Nanosecond switching speeds
»
Linear transfer characteristics
•
High input impedance
•
Majority carrier device
The 2N6904 is an n-channel enhancement-mode silicon-
gate power MOS field-effect transistor specifically designed
for use with logic level (5 volt) driving sources in applications
such as programmable controllers, automotive switching,
and solenoid drivers. This performance is accomplished
through a special gate oxide design which provides full
rated conduction at gate biases in the 3-5 volt range,
thereby facilitating true on-off power control directly from
logic circuit supply voltages.
The 2N6904 is supplied in the JEDEC TO-204AA steel
package.
N-CHANNEL ENHANCEMENT MODE
TERMINAL DIAGRAM
TERMINAL DESIGNATION
SOURCE
JEDEC TO-204AA
MAXIMUM RATINGS,
Absolute Maximum Values
(Tc =
25° C):
•
DRAIN-SOURCE VOLTAGE, V
D
» .
' DRAIN-GATE VOLTAGE (R« = 1 MO), VOOR
' GATE-SOURCE VOLTAGE, Va»
' DAIN CURRENT, RMS Continuous, ID
Pulsed, low
.'
• POWER DISSIPATION, Pi
At T
c
= 25°C
Above T
c
= 25"C, Derate Linearly
' OPERATING AND STORAGE TEMPERATURE, T,. T.,.
• LEAD TEMPERATURE. T
L
At distance > 1/8 in. (3.17 mm) from seating plane for 10s man
200V
20
°
V
±10
V
8A
20 A
75 W
°-
6 w/
°
c
-58 to -H50-C
260°C
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
2N6904
ELECTRICAL CHARACTERISTICS at C«»e Twnptratur* (T
c
= 25° C) unless otherwlM specified
LIMITS
CHARACTERISTIC
TEST CONDITIONS
UNITS
MIN.
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
BVoss
Vos(th)
loss
ID = 1 mA, Vos = 0
Vos * V
DS
, ID = 1 mA
VDS = 160V
200
1
—
—
—
—
—
—
„
3
350
75
20
—
—
—
—
—
MAX.
—
2
1
50
100
V
V
T
C
= 125°C, Vos = 160V
Gate-Source Leakage Current
Drain-Source On Voltage
loss
Vos(on)»
V
QS
= ±10 V, VDS = 0
ID = 5.1 A, VQS = 5 V
ID = 8 A, Vos = 5 V
M
nA
V
ft
mho
PF
3.06
5.5
0.6
Static Drain-Source On Resistance
r
0
s(on)«
ID = 5.1 A
T
C
=125°C, I
0
=5.1 A, Vos=5V
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse-Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Thermal Resistance Junction-to-Case
g**
C*.
C
0
>>
C,«,
Mon)
t,
t
d
(off)
t,
Rftc
VDS = 5V, I
D
= 5.1 A
V,,s = 25 V
VGS = 0 V
f = 0.1 MHz
1.11
12
900
250
100
45
150
135
150
V
O D
=100V
ID = 5.1 A
ns
RQ«
:
= Rg. = 15 O
V
as
= 5 V
1.67
°C/W
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
LIMITS
CHARACTERISTIC
TEST CONDITIONS
UNITS
MIN.
Diode Forward Voltage
Reverse Recovery Time
Vso
a
t,.
ISD = 8 A
MAX.
1.6
625
V
ns
0.8
—
I
F
= 4 A
di
F
/dt= 100A//US
* In accordance with JEDEC registration data.
•Pulsed: Pulse duration = 300
fjs,
max., duty cycle = 2%.
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