20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
Monolithic Dual N-Channel JFET
General Purpose Amplifier
FEATURES
• Tight Tracking
• Good Matching
2N5902-2N5909
ABSOLUTE MAXIMUM RATINGS
OA=25'C unless otherwise specified)
Oats-Drain or Gats-Source
Voltage (Mots 1)
Gate Current (Note 1)
Storage Temperature Range
Operating Temperature Range
Lead Temperature (Soldering, 10«ec)
-40V
10mA
-65'C to +200*C
-55"C to H-150°C
+300*0
PIN CONFIGURATION
raw
One Side Both Side*
Power Dissipation
367mW
EOOmW
Derate above 26-C
3mW/*C
4mW/'C
MOTE
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nay otase fv/mirient Oumgs to Iht
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tbonltwmfatrtfv fa operated ma/owe/ttitsp<KMailfoits is not
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absolute max/mum nittnf coix/lfora for attanOafpvt-
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ORDERING INFORMATION
TO-99
2N6902
2N5903
2N5904
2N5905
2N5906
2NS907
2NS908
2N6909
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Differential Gate Current
(T
A
- 2S°C unless otherwlss specified)
Teat Condition*
2N6902-6 ZN5903-7 2N6904-8 2NS905-9
Mln
Units
Max
Mln
Max
Mln
Max Mln Max
2.0
0.2
IGI-IGS!
VDG-IOV,
2N5902-5
l
D
= 30(iA,
T
A
=126'C 2NS906-9
2.0
0.2
1 0,95
1 0.95
5
10
10
2.0
0.2
1
1
10
20
20
0.2
0.96
0.9S
2.0
0.2
1
1
15
40
mV
nA
BSS1
IDSSJ
Saturation Drain Current Ratio
Transconductance Ratio
Differential Gate-Source Voltage
Drift (Measured at end points
T
A
andT
B
)
Differential Output Conductance
V
DS
=10V,Vas-0
0.95
0,97
1 0.95
1
5
0,97
Ifti
9lsi
IVQSl-Vaszl
4T
f«lkHz
AlVasi-Vasal
Gate-Source Voltage Differential V[X3-10V, T
A
=25'C
0-30(*A
T
B
-26'C
9oBl-Oe<zI
f- 1kHz
T
B
-ias
Q
c
6
5
0.2
T
A
--55'C
(tV/'C
40
0.2
M»
o,s
NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without
notice information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to
press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. N I
Semi-Conductors encourages customers to verity that datasheets are current before placing orders.
Quality Semi-Conductors
2N59O2-2N59O9
ELECTRICAL CHARACTERISTICS
(Continued) (T
A
- 26-c unless otherwise specified)
Symbol
IQSS
Parameter
Gats Reverse Current
Teat Condition*
V
G
s--20V,Vos-0
T
A
=125'C
I
Q
=-1MA.V
DS
-0
V
D
8-10V.I
D
-1nA
VM-IOV, !
D
=30fiA
2NS902-5
2NG996-9
Units
Mln
Max
-6
-10
Mln
Max
~i
PA
nA
V
pA
~s
-40
-0.6
-4.5
BVQSS
Vastoff)
V
QS
Qate-Source Breakdown Voltage
Qate-Source Cutoff Voltage
Gate Source Voltage
Gate Operating Current
-40
-0.6
-4.5
-4
-3
T
A
=126'C
la
—»
-1
-1
30
70
500
250
5
3
1.5
SO
150
1
0.1
1
-3
30
70
600
250
6
nA
,iA
f.3
loss
Of.
9o»
Saturation Drain Current
Common-Source Forward
Transconductanca
Common-Source Output Conductance
Common-Source Input Capacitance
Common-Source Reverse Transfer
Capacitance
Common-Source Forward
Transconductance
Common-Source Output Conductance
Equivalent Short Circuit Input
Noise Voltage (Note 1)
Spot Nolsa Figure (Nota 1)
Vos=10V, Vas=0
V
D8
-10V,Vas-0
V
D
S"10V,VQS=0
(Note 1)
f=1kHz
C*,
f=1MHz
3
1.6
Cr«
Bit
Bos
«n
NF
PF
VDQ=10V,lD*=30|iA
f-1kHz
50
150
1
0.2
MS
^V
IK
t= lOOHz
RO-IOMO
NOTE
1i For design retennee only, not 100% tMted.
3
dB
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