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2N6935

Description
Silicon NPN Power Transistor
CategoryDiscrete semiconductor    The transistor   
File Size86KB,3 Pages
ManufacturerNew Jersey Semiconductor
Websitehttp://www.njsemi.com
Download Datasheet Parametric Compare View All

2N6935 Overview

Silicon NPN Power Transistor

2N6935 Parametric

Parameter NameAttribute value
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknow
Maximum collector current (IC)0.6 A
Collector-emitter maximum voltage60 V
JESD-30 codeR-PSFM-T3
Number of components4
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typePNP
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Transistor component materialsSILICON
Base Number Matches1
C/
J
ioduets, Line.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistor
DESCRIPTION
• High Switching Speed
• High Voltage
APPLICATIONS
• Off-line power supplies
• High voltage inverters
Switching regulators
ABSOLUTE MAXIMUM RATINGS(T
a
=25'C)
SYMBOL
PARAMETER
2N6933
VCEV
Collector-Emitter
Voltage (V
BE
= -1.5V)
2N6934
2N6935
2N6933
VCEX
Collector-Emitter
Voltage
2N6934
2N6935
2N6933
VCEO
Collector-Emitter
Voltage
2N6934
2N6935
VEBO
Ic
ICM
IB
IBM
IE
IEM
PC
Tj
Tstg
2N6933/34/35
VALUE
450
550
650
350
400
450
300
350
400
8
15
23
5
7
20
30
175
150
-65-150
UNIT
V
V
f
^
I
1
2
\^
\S
PIN 1.BASE
2.
COLLECTOR
3. EMITTER
2 i
K
-_
TO-3PN package
¥-*•
;p
.1. ,
J
j>
V
'•
H^
O
I t7
"i r
K
i:
V
A
A
A
A
A
A
W
'ir
I:
i i
:
J
U
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Base Current-Peak
Emitter Current-Continuous
Emitter Current-Peak
Collector Power Dissipation
@ T
C
=25"C
Junction Temperature
Storage Temperature Range
i i
!
i !'
J!
ij
!
J
H
mm
WIN
DIM
MAX
A
19.90
20.10
B
15.50 15.70
C
4.70 4.90
D
0.90
1.10
E
1.90 2.10
F
3.40 3.60
G
2.90 3.10
H
3.20 3.40
J
0.595 0.605
K
20.50 20.70
L
1.90
2.10
N
10.89 10.91
•c
•c
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal Resistance, Junction to Case
MAX
0.71
UNIT
q
R
$
U
•c/w
Y
4.90 5.10
3.35 3.45
1.995
2.005
5.90
'i.10
9.90
10.10
Quality Semi-Conductors

2N6935 Related Products

2N6935 2N6933 2SC3835_2014
Description Silicon NPN Power Transistor Silicon NPN Power Transistor Silicon NPN Power Transistor
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 -
Reach Compliance Code unknow unknow -
Maximum collector current (IC) 0.6 A 0.6 A -
Collector-emitter maximum voltage 60 V 60 V -
JESD-30 code R-PSFM-T3 R-PSFM-T3 -
Number of components 4 4 -
Number of terminals 3 3 -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape RECTANGULAR RECTANGULAR -
Package form FLANGE MOUNT FLANGE MOUNT -
Polarity/channel type PNP PNP -
Terminal form THROUGH-HOLE THROUGH-HOLE -
Terminal location SINGLE SINGLE -
Transistor component materials SILICON SILICON -
Base Number Matches 1 1 -
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