20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.SA
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-6960
2N7052
2N7053
TO-92
TO-226
NPN Darlington Transistor
This device is designed for applications requiring extremely high
gain at collector currents to 1.0 A and high breakdown voltage.
Sourced from Process 06.
Absolute Maximum Ratings*
Symbol
VCEO
VCBO
VEBO
Ic
Tj, Tstg
TA
= 25
:
C unless otherwise
noted
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
Value
100
100
12
1.5
-55 to +150
Units
V
V
V
A
C
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2} These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD
Rejc
ROJA
TA = 25 C unless otherwise
noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
2N7052
625
5.0
83.3
200
Max
2N7053
1,000
8.0
125
50
*NZT7053
1,000
8.0
125
Units
mW
mW/
0
C
°C/W
"C/W
N'.l Semi-Conductors reserves the right lo change test conditions parameter limits and package dimensions without notice.
Information furnished by N.I Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However N.I
Semi-Conductors assumes no responsibility tor any errors or omissions discovered in its use. N.I Semi-Conductors encourages
customers to verifv that datasheets are current before placing orders.
NPN Darlington Transistor
(continued)
Electrical Characteristics
Symbol
Parameter
TA - 25 C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
VIBRJCEO
V
(
BR)CBO
V,BR)EBO
Collector-Emitter Breakdown Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
Collector-Cutoff Current
Emitter-Cutoff Current
lc = 1.0mA, I
B
= 0
lc = 100(iA, I
E
= 0
IE = 1.0mA, l
c
= 0
V
ca
= 80 V, I
E
= 0
VCE = 80 V, I
E
= 0
V
EB
= 7.0 V, l
c
= 0
100
100
12
0.1
0.2
0.1
V
V
V
HA
HA
HA
ICBO
ICES
IEBO
ON CHARACTERISTICS*
HFE
Vce(sat)
VBEIOID
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
l
c
= 100 mA, VCE = 5.0V
I
C
= 1.0A,V
C
E = 5.0V
l
c
= 100mA, I
B
= 0.1 mA
lc = 100mA, V
B
E = 5.0V
10,000
1,000
20,000
1.5
V
V
2.0
SMALL SIGNAL CHARACTERISTICS
FT
C
C
b
Transition Frequency
Collector-Base Capacitance
lc = 1 00mA, VCE = 5.0V,
V
CB
= 10V,f=1.0MHz 2N7052
2N7053
200
10
8.0
MHz
PF
Pulse Test: Pulse Width
t
300 na. Duty Cycle £ 1 0%
Typical Characteristics
£
3 100
o
Typical Pulsed Current Gain
vs Collector Current
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-
Collector-Emitter Saturation
Voltage vs Collector Current
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100
1 - COLLECTOR CURRENT (mA)
1000
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