Product Specification
www.jmnic.com
Silicon PNP Power Transistors
2SA1010
DESCRIPTION
・With
TO-220 package
・Complement
to type 2SC2334
・Low
collector saturation voltage
・Fast
switching speed
APPLICATIONS
・Switching
regulators
・
DC/DC converters
・
High frequency power amplifiers
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-Peak
Base current
T
a
=25℃
P
T
Total power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
40
150
-55~150
℃
℃
Open emitter
Open base
Open collector
CONDITIONS
VALUE
-100
-100
-7
-7
-15
-3.5
1.5
W
UNIT
V
V
V
A
A
A
JMnic
Product Specification
www.jmnic.com
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
h
FE-3
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
DC current gain
CONDITIONS
I
C
=-5.0A ,I
B
=-0.5A,L=1mH
I
C
=-5A; I
B
=-0.5A
I
C
=-5A; I
B
=-0.5A
V
CB
=-100V; I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-0.5A ; V
CE
=-5V
I
C
=-3A ; V
CE
=-5V
I
C
=-5A ; V
CE
=-5V
40
40
20
MIN
-100
TYP.
2SA1010
MAX
UNIT
V
-0.6
-1.5
-10
-10
200
200
V
V
μA
μA
Switching times resistive load
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=-5.0A I
B1
=- I
B2
=-0.5A
R
L
=10Ω;V
CC
≈50V
0.5
1.5
0.5
μs
μs
μs
h
FE-2
Classifications
M
40-80
L
60-120
K
100-200
JMnic
Product Specification
www.jmnic.com
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1010
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
JMnic
Product Specification
www.jmnic.com
Silicon PNP Power Transistors
2SA1010
JMnic
Product Specification
www.jmnic.com
Silicon PNP Power Transistors
2SA1010
JMnic
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