JMnic
Product Specification
Silicon PNP Power Transistors
2SA1043
DESCRIPTION
・With
TO-3 package
・High
transition frequency
・Excellent
safe operating area
APPLICATIONS
・Power
switching applications
・High
frequency power amplifier
・Switching
regulators
・DC-DC
converters
PINNING(see Fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-120
-120
-7
-30
150
175
-55~200
UNIT
V
V
V
A
W
℃
℃
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SA1043
TYP.
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=-10mA ;I
B
=0
-120
V
V
(BR)CBO
Collector-base breakdown voltage
I
C
=-0.1mA ;I
E
=0
-120
V
V
(BR)EBO
Emitter-base breakdown voltage
I
E
=-0.1mA ;I
C
=0
-7
V
V
CEsat
Collector-emitter saturation voltage
I
C
=-15A; I
B
=-1.5A
-1.5
V
V
BEsat
Base-emitter saturation voltage
I
C
=-15A; I
B
=-1.5A
-2.0
V
I
CBO
Collector cut-off current
V
CB
=-120V; I
E
=0
-50
μA
I
EBO
Emitter cut-off current
V
EB
=-7V; I
C
=0
-50
μA
h
FE
DC current gain
I
C
=-3A ; V
CE
=-5V
35
200
C
OB
Output capacitance
I
E
=0 ; V
CB
=-10V;f=1.0MHz
600
pF
f
T
Transition frequency
I
C
=-2A ; V
CE
=-10V
60
MHz
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1043
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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