JMnic
Product Specification
Silicon PNP Power Transistors
DESCRIPTION
・With
TO-66 package
・Excellent
safe operating area
・High
breadown voltage
APPLICATIONS
・For
general-purpose amplifier ;
and switching applications
PINNING(see Fig.2)
PIN
1
2
3
Base
Emitter
Collector
DESCRIPTION
2SA1250
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=
℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
V
CBO
Collector-base voltage
Open emitter
-200
V
V
CEO
Collector-emitter voltage
Open base
-200
V
V
EBO
Emitter-base voltage
Open collector
-7
V
I
C
Collector current
-8
A
P
D
Total power dissipation
T
C
=25℃
30
W
℃
℃
T
j
T
stg
Junction temperature
150
Storage temperature
-55~150
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SA1250
TYP.
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=-10mA ;I
B
=0
-200
V
V
(BR)EBO
Emitter-base breakdown voltage
I
E
=-1mA ;I
C
=0
-7
V
V
CEsat
Collector-emitter saturation voltage
I
C
=-5A; I
B
=-0.5A
-1.5
V
V
BEsat
Base-emitter saturation voltage
I
C
=-5A; I
B
=-0.5A
-2.0
V
I
CBO
Collector cut-off current
V
CB
=200V; I
E
=0
-10
μA
I
EBO
Emitter cut-off current
V
EB
=-7V; I
C
=0
-10
μA
h
FE-1
DC current gain
I
C
=-2A ; V
CE
=-1V
40
200
h
FE-2
DC current gain
I
C
=-5A ; V
CE
=-1V
20
2