Product Specification
www.jmnic.com
Silicon PNP Power Transistors
2SA1360
DESCRIPTION
・With
TO-126 package
・Complement
to type 2SC3423
・High
transition frequency
APPLICATIONS
・Audio
frequency amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
・
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
T
a
=25℃
P
D
Total power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
5
150
-55½+150
℃
℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-150
-150
-5
-50
-5
1.2
W
UNIT
V
V
V
mA
mA
JMnic
Product Specification
www.jmnic.com
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
2SA1360
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=-1mA ;I
B
=0
-150
V
V
CEsat
V
BE
Collector-emitter saturation voltage
I
C
=-10mA; I
B
=-1mA
I
C
=-10mA ; V
CE
=-5V
-1.0
V
Base-emitter on voltage
-0.8
V
μA
μA
I
CBO
Collector cut-off current
V
CB
=-150V; I
E
=0
-0.1
I
EBO
Emitter cut-off current
V
EB
=-5V; I
C
=0
-0.1
h
FE
DC current gain
I
C
=-10mA ; V
CE
=-5V
80
240
C
ob
Output capacitance
I
E
=0 ; V
CB
=-10V f=1MHz
2.5
pF
f
T
Transition frequency
I
C
=-10mA ; V
CE
=-10V
200
MHz
h
FE
Classifications
O
80-160
Y
120-240
JMnic
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