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2SA1483-R

Description
High Frequency Amplifier Applications
CategoryDiscrete semiconductor    The transistor   
File Size174KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric Compare View All

2SA1483-R Overview

High Frequency Amplifier Applications

2SA1483-R Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Parts packaging codeSC-62
package instructionSMALL OUTLINE, R-PSSO-F3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)0.2 A
Collector-based maximum capacity5 pF
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JESD-30 codeR-PSSO-F3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power consumption environment1 W
Maximum power dissipation(Abs)0.5 W
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
VCEsat-Max0.3 V
Base Number Matches1
2SA1483
TOSHIBA Transistor
Silicon PNP Epitaxial Type (PCT process)
2SA1483
High Frequency Amplifier Applications
Video Amplifier Applications
High Speed SwitcHing Applications
High transition frequency: f
T
= 200 MHz (typ.)
Low collector output capacitance: C
ob
= 3.5 pF (typ.)
Complementary to 2SC3803
Unit: mm
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Continuous collector current
Continuous base current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Collector power dissipation
P
C
(Note 1)
Junction temperature
Storage temperature range
T
j
T
stg
Rating
−60
−45
−5
−200
−50
500
1000
150
−55
to 150
mW
Unit
V
V
V
mA
mA
PW-MINI
JEDEC
JEITA
TOSHIBA
SC-62
2-5K1A
°C
°C
Weight: 0.05 g (typ.)
Note 1: Mounted on a ceramic substrate (250 mm
2
× 0.8 t)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2006-11-09

2SA1483-R Related Products

2SA1483-R 2SA1483-Y
Description High Frequency Amplifier Applications High Frequency Amplifier Applications
Is it lead-free? Contains lead Contains lead
Is it Rohs certified? incompatible incompatible
Parts packaging code SC-62 SC-62
package instruction SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3
Contacts 3 3
Reach Compliance Code unknow unknow
ECCN code EAR99 EAR99
Shell connection COLLECTOR COLLECTOR
Maximum collector current (IC) 0.2 A 0.2 A
Collector-based maximum capacity 5 pF 5 pF
Collector-emitter maximum voltage 45 V 45 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 40 120
JESD-30 code R-PSSO-F3 R-PSSO-F3
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type PNP PNP
Maximum power consumption environment 1 W 1 W
Maximum power dissipation(Abs) 0.5 W 0.5 W
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form FLAT FLAT
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 200 MHz 200 MHz
VCEsat-Max 0.3 V 0.3 V
Base Number Matches 1 1

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