JMnic
Product Specification
Silicon PNP Power Transistors
2SA1670
DESCRIPTION
・With
TO-3PML package
・Complement
to type 2SC4385
APPLICATIONS
・Audio
and general purpose
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
DESCRIPTION
・
Absolute maximum ratings(Ta=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-80
-80
-6
-6
-3
60
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
2SA1670
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=-50mA; I
B
=0
-80
V
V
CEsat
I
CBO
Collector-emitter saturation voltage
I
C
=-2 A;I
B
=-0.2 A
V
CB
=-80V; I
E
=0
-1.5
V
μA
μA
Collector cut-off current
-10
I
EBO
Emitter cut-off current
V
EB
=-6V; I
C
=0
-10
h
FE
DC current gain
I
C
=-2A ; V
CE
=-4V
50
f
T
Transition frequency
I
C
=-0.5A ; V
CE
=-12V
20
MHz
Switching times
μs
μs
μs
t
on
t
stg
Turn-on time
I
C
=-3A;R
L
=10Ω
I
B1
=-I
B2
=-0.3A
V
CC
=-30V
0.25
Storage time
0.5
t
f
Fall time
0.1
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1670
Fig.2 Outline dimensions
3