JMnic
Product Specification
Silicon PNP Power Transistors
2SA1837
DESCRIPTION
・With
TO-220F package
・Complement
to type 2SC4793
・High
transition frequency
APPLICATIONS
・Power
amplifier applications
・Driver
stage amplifier applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-220F) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
T
C
=25℃
P
C
Collector dissipation
T
a
=25℃
T
j
T
stg
Junction temperature
Storage temperature
2.0
150
-55~150
℃
℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-230
-230
-5
-1
-0.1
20
W
UNIT
V
V
V
A
A
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE
C
OB
f
T
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Output capacitance
Transition frequency
CONDITIONS
I
C
=-10mA ; I
B
=0
I
C
=-0.5A ;I
B
=-50mA
I
C
=-0.5A ; V
CE
=-5V
V
CB
=-230V; I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-0.1A ; V
CE
=-5V
I
E
=0; V
CB
=-10V;f=1MHz
I
C
=-0.1A ; V
CE
=-10V
100
MIN
-230
2SA1837
TYP.
MAX
UNIT
V
-1.5
-1.0
-1.0
-1.0
320
30
70
V
V
μA
μA
pF
MHz
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1837
Fig.2 Outline dimensions
3
JMnic
Product Specification
Silicon PNP Power Transistors
2SA1837
4