2SA671_15 datasheet, PDF - EEWORLD Datasheet

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2SA671_15: DescriptionSilicon PNP Power Transistors; File Size46KB，3 Pages; ManufacturerJinmei; Websitehttp://www.jmnic.com/

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2SA671_15 Overview

Silicon PNP Power Transistors

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JMnic

Product Specification

Silicon PNP Power Transistors

2SA671

DESCRIPTION

・With

TO-220 package

・Complement

to type 2SC1061

・Low

collector saturation voltage

Note:type 2SA670 with short pin

APPLICATIONS

・Designed

for use in low frequency

power amplifier applications

PINNING

DESCRIPTION

Emitter

Collector;connected to

mounting base

Base

Fig.1 simplified outline (TO-220) and symbol

Absolute maximum ratings(Ta=25

℃)

SYMBOL

CBO

CEO

EBO

stg

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector current-peak

Base current

Collector power dissipation

Junction temperature

Storage temperature

=25℃

CONDITIONS

Open emitter

Open base

Open collector

VALUE

-50

-4

-3

-6

-0.5

150

-55~150

UNIT

℃

THERMAL CHARACTERISTICS

SYMBOL

th j-C

PARAMETER

Thermal resistance from junction to case

MAX

5.0

UNIT

℃/W

2SA671_15 Related Products

	2SA671_15	2SA671
Description	Silicon PNP Power Transistors	Silicon PNP Power Transistors

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