JMnic
Product Specification
Silicon PNP Power Transistors
2SA770 2SA771
DESCRIPTION
・With
TO-220 package
・Complement
to type 2SC1985/1986
・Low
collector saturation voltage
APPLICATIONS
・For
general and industrial
purpose applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25
℃)
SYMBOL
PARAMETER
2SA770
V
CBO
Collector-base voltage
2SA771
2SA770
V
CEO
Collector-emitter voltage
2SA771
V
EBO
I
C
I
B
P
C
T
j
T
stg
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
-80
-6
-6
-3
40
150
-55~150
V
A
A
W
℃
℃
Open emitter
-80
-60
V
CONDITIONS
VALUE
-60
V
UNIT
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2SA770
V
(BR)CEO
Collector-emitter
breakdown voltage
2SA771
V
CEsat
Collector-emitter saturation voltage
2SA770
I
CBO
Collector
cut-off current
2SA771
I
EBO
h
FE
f
T
Emitter cut-off current
DC current gain
Transition frequency
I
C
=-3A; I
B
=-0.3A
V
CB
=-60V; I
E
=0
I
C
=-25mA ,I
B
=0
CONDITIONS
2SA770 2SA771
MIN
-60
TYP.
MAX
UNIT
V
-80
-1.0
V
-1.0
V
CB
=-80V; I
E
=0
V
EB
=-6V; I
C
=0
I
C
=-1A ; V
CE
=-4V
I
C
=-0.5A ; V
CE
=-12V
40
10
-1.0
mA
mA
MHz
Switching times
t
r
t
stg
t
f
Rise time
Storage time
Fall time
I
C
=-3A ; V
CC
=-9V
I
B1
=-I
B2
=-0.4A;R
L
=3Ω
0.9
1.0
0.1
μs
μs
μs
2
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