JMnic
Product Specification
Silicon PNP Power Transistors
2SA963
DESCRIPTION
・With
TO-126 package
・Complement
to type 2SC2209
・High
collector power dissipation
APPLICATIONS
・For
low-frequency power amplification
PINNING
PIN
1
2
3
Emitter
Collector;connected to
mounting base
Base
DESCRIPTION
・
Absolute Maximun Ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-50
-40
-5
-1.5
-3
10
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
2SA963
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=-2mA;I
B
=0
-40
V
V
(BR)CBO
V
CEsat
Collector-base breakdown voltage
I
C
=-1mA ;I
E
=0
I
C
=-1.5A ;I
B
=-150mA
-50
V
Collector-emitter saturation voltage
-1.0
V
V
BEsat
Base-emitter saturation voltage
I
C
=-2A ;I
B
=-0.2A
-1.5
V
μA
μA
μA
I
CBO
Collector cut-off current
V
CB
=-20V; I
E
=0
-1
I
CEO
Collector cut-off current
V
CE
=-10V; I
B
=0
-100
I
EBO
Emitter cut-off current
V
EB
=-5V; I
C
=0
-10
h
FE
C
OB
DC current gain
I
C
=-1A ; V
CE
=-5V
I
E
=0 ; V
CB
=-5V;f=1MHz
80
220
Output capacitance
70
pF
f
T
Transition frequency
I
E
=0.5A ; V
CB
=-5V,f=200MHz
150
MHz
h
FE
Classifications
Q
80-160
R
120-220
2
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