JMnic
Product Specification
Silicon PNP Power Transistors
2SB1101
DESCRIPTION
・With
TO-220 package
・Complement
to type 2SD1601
・DARLINGTON
・High
DC current gain
APPLICATIONS
・For
low frequency power amplifier
applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-60
-60
-7
-4
-8
40
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
2SB1101
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=-25mA ,I
B
=0
-60
V
V
(BR)EBO
Emitter-base breakdown voltage
I
E
=-50mA ,I
C
=0
-7
V
V
CEsat -1
Collector-emitter saturation voltage
I
C
=-2A; I
B
=-4mA
-1.5
V
V
CEsat -2
Collector-emitter saturation voltage
I
C
=-4A; I
B
=-40mA
-3.0
V
V
BEsat-1
Base-emitter saturation voltage
I
C
=-2A; I
B
=-4mA
-2.0
V
V
BEsat-2
Base-emitter saturation voltage
I
C
=-4A; I
B
=-40mA
-3.5
V
μA
I
CBO
Collector cut-off current
V
CB
=-60V; I
E
=0
-100
I
CEO
Collecto cut-off current
V
CE
=-50V; R
BE
=∞
-10
μA
h
FE
DC current gain
I
C
=-2A ; V
CE
=-3V
1000
20000
V
D
Diode forward voltage
I
D
=4A;
3.0
V
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=-2A I
B1
=-I
B2
=-4mA
0.8
4.0
1.0
μs
μs
μs
2
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