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2SB1160_2014

Description
Silicon PNP Power Transistors
File Size73KB,4 Pages
ManufacturerJinmei
Websitehttp://www.jmnic.com/
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2SB1160_2014 Overview

Silicon PNP Power Transistors

JMnic
Product Specification
Silicon PNP Power Transistors
2SB1160
DESCRIPTION
・With
TO-3PFa package
・Complement
to type 2SD1715
・High
f
T
・Satisfactory
linearity of h
FE
・Wide
area of safe operation
APPLICATIONS
・For
high power amplifier applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
DESCRIPTION
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
T
C
=25℃
P
C
Collector power dissipation
3
T
j
T
stg
Junction temperature
Storage temperature
150
-55~150
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-150
-150
-5
-9
-15
100
W
UNIT
V
V
V
A
A

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